參數(shù)資料
型號: 1214-300M
廠商: MICROSEMI CORP
元件分類: BIP RF Power
英文描述: L BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, CASE 55ST, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 227K
代理商: 1214-300M
1214-300M Rev 4
MSC Corp., reserves the right to make changes without further notice. MSC recommends that before the product(s) described herein are written into specifications, or
used in critical applications, that the performance characteristics be verified by contacting the factory.
MSC Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 TEL. 408-986-8031 FAX 408-869-2324
GENERAL DESCRIPTION
The 1214-300M is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at one hundred fifty
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metalization and NiCr emitter
ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC
600 Watts
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
70 Volts
BVebo
Emitter to Base Voltage
3.5 Volts
Ic
Collector Current
20 Amps
Maximum Temperatures
Storage Temperature
- 65 to + 200oC
Operating Junction Temperature
+ 200oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
ηηηηc
Rl
VSWR1
VSWRs
Power Out
Power Gain
Collector Efficiency
Input Return loss
Load Mismatch Tolerance
Load Mismatch - Stability
Freq = 1200 – 1400 MHz
Vcc = 40 Volts
Pin = 40 Watts
Pulse Width = 150
s
Duty Factor = 10%
300
8.75
50
10.0
55
400
2:1
1.5:1
Watts
dB
%
dB
Note 1: Pulse condition of 150
sec, 10%.
Bvces
Ices
θθθθjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 80 mA
Vce = 40 Volts
Rated Pulse Condition
70
10
0.29
Volts
mA
oC/W
1214– 300M
300 Watts - 40 Volts, 150
s, 10%
Radar 1200 - 1400 MHz
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