參數(shù)資料
型號: 150K60A
元件分類: 整流器
英文描述: 150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA
封裝: DO-8, 1 PIN
文件頁數(shù): 2/8頁
文件大小: 193K
代理商: 150K60A
45L(R), 150K/ KS(R) Series
2
www.irf.com
Bulletin I2037 rev. B 03/03
Voltage
V
RRM
, maximum repetitive
V
RSM
, maximum non-
I
RRM
max.
Type number
Code
peak reverse voltage
repetitive peak rev. voltage
@ T
J
= 175°C
VV
mA
10
100
200
20
200
300
35
30
300
400
40
400
500
60
600
720
ELECTRICAL SPECIFICATIONS
Voltage Ratings
45L(R)
150K(R)
150KS(R)
Forward Conduction
I
F(AV)
Max. average forward current
150
A
180° conduction, half sine wave
@ Case temperature
150
°C
I
F(RMS)
Max. RMS forward current
235
A
DC @ 142°C case temperature
I
FSM
Max. peak, one-cycle forward,
3570
t = 10ms
No voltage
non-repetitive surge current
3740
t = 8.3ms
reapplied
3000
t = 10ms
100% V
RRM
3140
t = 8.3ms
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
64
t = 10ms
No voltage
Initial T
J
= T
J
max.
58
t = 8.3ms
reapplied
45
t = 10ms
100% V
RRM
41
t = 8.3ms
reapplied
I2
√t
Maximum I2
√t for fusing
640
KA2
√s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold
voltage
V
F(TO)2
High level value of threshold
voltage
r
f1
Low level value of forward
slope resistance
r
f2
High level value of forward
slope resistance
V
FM
Max. forward voltage drop
1.33
V
I
pk
= 471A, T
J
= 25°C, t
p
= 10ms sinusoidal wave
Parameter
45L /150K
Units
Conditions
KA2s
A
V
m
0.67
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
0.83
(I > x
π x I
F(AV)
),T
J
= T
J
max.
1.42
(16.7% x
π x I
F(AV)
< I <
π x I
F(AV)
), T
J
= T
J
max.
0.91
(I > x
π x I
F(AV)
),T
J
= T
J
max.
相關(guān)PDF資料
PDF描述
150KR60A 150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA
150KSR10 150 A, 100 V, SILICON, RECTIFIER DIODE
150KSR30 150 A, 300 V, SILICON, RECTIFIER DIODE
150KSR60 150 A, 600 V, SILICON, RECTIFIER DIODE
150KS40 150 A, 400 V, SILICON, RECTIFIER DIODE
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