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| 型號： | 150U080D |
| 英文描述： | 800V 150A Std. Recovery Diode in a DO-205AA (DO-8)package |
| 中文描述： | 800V的150A性病?；謴投O管中的DO - 205AA（請勿- 8）封裝 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 150U080D |
150U(R).. Series
5
www.irf.com
Bulletin I2025 rev. C 10/02
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 8 - Thermal Impedance Z
thJC Characteristic
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
Forward
Current
(A)
Pulse Train Duration(s)
Peak
Half
Sine
Wave
On-state
Current
(A)
Instantaneous Forward Voltage (V)
Instantaneous
Forward
Current
(A)
Square Wave Pulse Duration (s)
Transient
Thermal
Impedance
Z
thJC
(K/W)
500
1000
1500
2000
2500
3000
3500
1
10
100
Per Junction
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 180C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
500
1000
1500
2000
2500
3000
3500
4000
0.01
0.1
1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Per Junction
Of Conduction May Not Be Maintained.
Initial T j = 180C
No Voltage Reapplied
Rated V rrm Reapplied
10
100
1000
10000
0.5
1
1.5
2
2.5
3
Tj = 25C
Tj = 180C
0.01
0.1
1
0.001
0.01
0.1
1
10
150U(R)
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
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