參數(shù)資料
型號(hào)： 1N3051BUR-1TR
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 齊納二極管
英文描述： 200 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
封裝： HERMETIC SEALED, LEADLESS, GLASS, MELF-2
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 161K
代理商： 1N3051BUR-1TR
Surface Mount 1.5 W
GLASS ZENER DIODES
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N3016BUR-1 thru 1N3051BUR-1, e3
(or MLL3016B thru MLL3051B, e3)
1N3
016
BUR-1,
e3
thru
1N3
051
BUR-1,
e3
DESCRIPTION
APPEARANCE
This surface mountable zener diode series is similar to the 1N3016 thru
1N3051 JEDEC registration in the DO-13 package except that it meets the
surface mount DO-213AB outline. It is an ideal selection for applications of
high density and low parasitic requirements. Due to its glass hermetic seal
qualities and metallurgically enhanced internal construction, it is also well
suited for high-reliability applications. This can be acquired by a source
control drawing (SCD), or by ordering device types with MQ, MX, or MV
prefix to part number for equivalent screening to JAN, JANTX or JANTXV.
DO-213AB
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Leadless surface mount package equivalents to the
JEDEC registered 1N3016 thru 1N3051 except with
higher power rating of 1.5 Watts
Ideal for high-density mounting
Voltage range: 6.8 to 200 volts
Hermetically sealed, double-slug glass construction
Metallurgically enhanced contact construction.
Options for screening in accordance with MIL-PRF-
19500/115 for JAN, JANTX, JANTXV, and JANS with
MQ, MX, MV, or MSP prefixes respectively for part
numbers, e.g. MX1N3016BUR-1, MV1N3051BUR-1,
etc.
Axial lead “thru-hole” DO-13 packages per JEDEC
registration available as 1N3016B thru 1N3051B (see
separate data sheet with MIL-PRF-19500/115
qualification)
RoHS Compliant devices available by adding “e3” suffix
Regulates voltage over a broad operating current
and temperature range
Wide selection from 6.8 to 200 V
Tight voltage tolerances available
Low reverse (leakage) currents
Leadless package for surface mounting
Ideal for high-density mounting
Metallurgically enhanced internal contact design for
greater reliability and lower thermal resistance
Nonsensitive to ESD
Hermetically sealed glass package
Specified capacitance (see Figure 2)
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Power dissipation at 25
C: 1.5 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
C to
+175
C
Thermal Resistance: 40
C/W junction to end cap,
or 120
C/W junction to ambient when mounted on
FR4 PC board (1 oz Cu) with recommended
footprint (see last page)
Steady-State Power: 1.50 watts at end-cap
temperature TEC < 115
oC, or 1.25 watts at T
A = 25
C
when mounted on FR4 PC board and
recommended footprint as described for thermal
resistance (also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
Solder Temperatures: 260
C for 10 s (max)
CASE: Hermetically sealed glass MELF package
TERMINALS: Tin-lead or RoHS compliant
annealed matte-Tin plating solderable per MIL-
STD-750, method 2026
POLARITY: Cathode indicated by band. Diode to
be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Cathode band only
TAPE & REEL optional: Standard per EIA-481-1-A
with 12 mm tape, 1500 per 7 inch reel or 5000 per
13 inch reel (add “TR” suffix to part number)
WEIGHT: 0.05 grams
See package dimensions on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2006
3-12-2006 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料
PDF描述
1N3051DUR-1TR 200 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
1N3306C 7.5 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
1N3306RC 7.5 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
1N3309RC 10 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
1N3309RD 10 V, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-203AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N3064 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N3064_Q 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N3064_T50R 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N3064TR 功能描述:整流器 Hi Conductance Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N3067 制造商:-- 功能描述:Rectifier Diode, 30 Volt, DO-7
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