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參數(shù)資料
| 型號(hào)： | 1N4003 |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Rectifiers |
| 中文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 31K |
| 代理商： | 1N4003 |
1996 Jun 10
2
Philips Semiconductors
Product specication
Rectiers
1N4001ID to 1N4007ID
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
(1) Implotec is a trademark of Philips.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N4001ID
50
V
1N4002ID
100
V
1N4003ID
200
V
1N4004ID
400
V
1N4005ID
600
V
1N4006ID
800
V
1N4007ID
1000
V
VR
continuous reverse voltage
1N4001ID
50
V
1N4002ID
100
V
1N4003ID
200
V
1N4004ID
400
V
1N4005ID
600
V
1N4006ID
800
V
1N4007ID
1000
V
IF(AV)
average forward current
averaged over any 20 ms
period; Tamb =75 °C; see Fig.2
1.00 A
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2
0.75 A
IFRM
repetitive peak forward current
10
A
IFSM
non-repetitive peak forward current
half sinewave; 60 Hz
20
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4003- | 制造商:TAIW 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1.0A |
| 1N4003 TR | 制造商:NONE 功能描述: |
| 1N4003 _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4003 BK | 功能描述:DIODE GEN PURPOSE DO41 制造商:central semiconductor corp 系列:* 零件狀態(tài):生命周期結(jié)束 標(biāo)準(zhǔn)包裝:2,000 |
| 1N4003 BULK | 制造商:ROHM 功能描述:General Purpose 200V Through Hole Rectifier DO-41 1A |
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