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參數(shù)資料
| 型號： | 1N4003GP-BP |
| 廠商： | MICRO COMMERCIAL COMPONENTS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 495K |
| 代理商： | 1N4003GP-BP |
1N4001GP
THRU
1N4007GP
1 Amp Glass
PassivatedRectifier
50 - 1000 Volts
DO-41
Features
Glass Passivated Junction
Low Current Leakage and Low Cost
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.166
.205
4.10
5.20
B
.080
.107
2.00
2.70
C
.028
.034
.70
.90
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -55
°C to +150°C
Storage Temperature: -55
°C to +150°C
Maximum Thermal Resistance; 20
°C/W Junction To Lead
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
1N4001GP
50V
35V
50V
1N4002GP
100V
70V
100V
1N4003GP
200V
140V
200V
1N4004GP
400V
280V
400V
1N4005GP
600V
420V
600V
1N4006GP
800V
560V
800V
1N4007GP
1000V
700V
1000V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 75
°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
VF
1.1V
IFM = 1.0A;
TJ = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
5.0
A
50
A
TJ = 25
°C
TJ = 125
°C
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
Cathode
Mark
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
www.mccsemi.com
1 of 4
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Note:
1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.0u
sIF=0.5A, IR=1.0A,
Irr=0.25A
Trr
Maximum Reverse
Recovery Time
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
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| 1N4006 | 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4007 | 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N4103-BP | 9.1 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4003GPE/3 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4003GPE/4 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4003GPE/54 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4003GP-E3/1 | 功能描述:整流器 200 Volt 1.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4003GP-E3/23 | 功能描述:整流器 Vr/200V Io/1A Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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