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參數(shù)資料
| 型號： | 1N4134D |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 91 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 109K |
| 代理商： | 1N4134D |
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
FAX (978) 689-0803
111
1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND
JANS
PER MIL-PRF-19500/435
LEADLESS PACKAGE FOR SURFACE MOUNT
LOW CURRENT OPERATION AT 250
μ
A
METALLURGICALLY BONDED
DOU-
1N4099UR-1
thru
1N4135UR-1
and
CDLL4099 thru CDLL4135
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
DC Power Dissipation: 500mW @ TEC= +125°C
Power Derating: 10mW/ °C above TEC= +125°C
Forward Derating @ 200 mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
MILLIMETERS INCHES
MIN
MAX
1.60
1.70
0.41
0.55
3.30
3.70
2.54 REF.
0.03 MIN.
DIM
D
F
G
G1
S
MIN
0.063 0.067
0.016 0.022
.130
.100 REF.
.001 MIN.
MAX
.146
FIGURE 1
DESIGN DATA
CASE:
DO-213AA
,
Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (
ROJEC):
100
°
C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (
ZOJX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
CDI
TYPE
NUMBER
NOMINAL
ZENER
VOLTAGE
VZ@ lZT
(Note 1)
VOLTS
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
82
87
91
100
ZENER
TEST
CURRENT
lZT
MAXIMUM
ZENER
IMPEDANCE
ZZT
(Note 2)
OHMS
200
200
200
200
200
200
200
200
200
200
100
100
100
100
150
150
150
150
150
150
200
200
200
200
200
250
250
300
300
400
500
700
700
800
1000
1200
1500
MAXIMUM REVERSE
LEAKAGE
CURRENT
lR@ VR
MAXIMUM
ZENER
CURRENT
lZM
μ
A
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
250
μ
A
10
10
1.0
1.0
1.0
1.0
.05
.05
.05
.05
.05
.05
.05
.05
.05
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
.01
VOLTS
5.17
5.70
6.24
6.61
6.92
7.60
8.44
9.12
9.87
10.65
11.40
12.15
12.92
13.67
14.44
15.20
16.72
18.25
19.00
20.46
21.28
22.80
25.08
27.38
29.65
32.65
35.75
38.76
42.60
45.60
47.10
51.68
57.00
62.32
66.12
69.16
76.00
mA
56
51
46
44
42
38
35
32
29
27
25
24
22
21
20
19
17
16
15
14
14
13
12
11
9.8
8.9
8.1
7.5
6.7
6.4
6.1
5.6
5.1
4.6
4.4
4.2
3.8
CDLL4099
CDLL4100
CDLL4101
CDLL4102
CDLL4103
CDLL4104
CDLL4105
CDLL4106
CDLL4107
CDLL4108
CDLL4109
CDLL4110
CDLL4111
CDLL4112
CDLL4113
CDLL4114
CDLL4115
CDLL4116
CDLL4117
CDLL4118
CDLL4119
CDLL4120
CDLL4121
CDLL4122
CDLL4123
CDLL4124
CDLL4125
CDLL4126
CDLL4127
CDLL4128
CDLL4129
CDLL4130
CDLL4131
CDLL4132
CDLL4133
CDLL4134
CDLL4135
NOTE 1
The CDI type numbers shown above have a Zener voltage tolerance of
+ 5% of the nominal Zener voltage. Nominal Zener voltage is measured
with the device junction in thermal equilibrium at an ambient temperature
of 25°C + 3°C. A "C" suffix denotes a + 2% tolerance and a "D" suffix
denotes a + 1% tolerance.
NOTE 2
Zener impedance is derived by superimposing on lZT, A 60 Hz rms a.c.
current equal to 10% of lZT(25
μ
A a.c.).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4134DUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4135C | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4135CUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4135D | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4135DUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4134DUR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4134DUR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4134DURTR | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4134DURTR-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GLASS SURFACE MOUNT 0.5 WATT ZENERS |
| 1N4134-TR | 功能描述:穩(wěn)壓二極管 .25W 5% Lw Noise/Lvl RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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