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參數(shù)資料
| 型號： | 1N4370A |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | surface mount silicon Zener diodes |
| 中文描述： | 硅表面貼裝齊納二極管 |
| 文件頁數(shù)： | 41/42頁 |
| 文件大?。?/td> | 424K |
| 代理商： | 1N4370A |
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1N5333B through 1N5388B
Motorola TVS/Zener Device Data
6-137
5 Watt Surmetic 40 Data Sheet
Devices listed in bold, italic are Motorola preferred devices.
I
VZ, ZENER VOLTAGE (VOLTS)
1000
100
10
1
0.1
10
20
30
40
50
60
70
80
100
10
1
0.1
80
100
120
140
160
180
200
220
VZ, ZENER VOLTAGE (VOLTS)
I
T = 25
°
C
Figure 9. Zener Voltage versus Zener Current
VZ = 11 thru 75 Volts
Figure 10. Zener Voltage versus Zener Current
VZ = 82 thru 200 Volts
APPLICATION NOTE
Since the actual voltage available from a given zener diode
is temperature dependent, it is necessary to determine junc-
tion temperature under any set of operating conditions in order
to calculate its value. The following procedure is recom-
mended:
Lead Temperature, TL, should be determined from:
TL =
θ
LA PD + TA
θ
LA is the lead-to-ambient thermal resistance and PD is the
power dissipation.
Junction Temperature, TJ, may be found from:
TJ = TL +
TJL
TJL is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 5 for dc power.
TJL =
θ
JL PD
For worst-case design, using expected limits of IZ, limits of
PD and the extremes of TJ (
TJ) may be estimated. Changes
in voltage, VZ, can then be found from:
V =
θ
VZ
TJ
θ
VZ, the zener voltage temperature coefficient, is found from
Figures 2 and 3.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current excursions
as low as possible.
Data of Figure 4 should not be used to compute surge capa-
bility. Surge limitations are given in Figure 6. They are lower
than would be expected by considering only junction tempera-
ture, as current crowding effects cause temperatures to be ex-
tremely high in small spots resulting in device degradation
should the limits of Figure 6 be exceeded.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4370 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 1N4370CUR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4370CUR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4370CURTR | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N4370CURTR-1 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4370A BK | 功能描述:DIODE ZENER 2.4V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:2.4V 容差:- 功率 - 最大值:500mW 工作溫度:- 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500 |
| 1N4370A TR | 功能描述:DIODE ZENER 2.4V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:2.4V 容差:- 功率 - 最大值:500mW 工作溫度:- 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:10,000 |
| 1N4370A/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators |
| 1N4370A_Q | 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N4370A_T50A | 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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