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參數(shù)資料
| 型號(hào)： | 1N459AT50R |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 36K |
| 代理商： | 1N459AT50R |
Discrete POWER & Signal
Technologies
N
High Conductance Low Leakage Diode
Sourced from Process 1M.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
456/A
457/A
458/A
459/A
25
60
125
175
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
500
mA
if
Recurrent Peak Forward Current
600
mA
if(surge)
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
1.0
4.0
A
Tstg
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
1N / FDLL 456/A - 459/A
PD
Total Device Dissipation
Derate above 25
°C
500
3.33
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
300
°C/W
1N/FDLL 456/A - 1N/FDLL 459/A
1N/FDLL
456/A
/
457/A
/
458/A
/
459/A
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
DO-35
COLOR BAND MARKING
DEVICE
1ST BAND 2ND BAND
FDLL456
BROWN
WHITE
FDLL456A
BROWN
WHITE
FDLL457
RED
BLACK
FDLL457A
RED
BLACK
FDLL458
RED
BROWN
FDLL458A
RED
BROWN
FDLL459
RED
FDLL459A
RED
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N458.TR | 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N458A.TR | 0.2 A, 150 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N459.TR | 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N456A.TR | 0.2 A, 30 V, SILICON, SIGNAL DIODE, DO-35 |
| 1N457A | 0.2 A, 70 V, SILICON, SIGNAL DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N459ATR | 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N459STR | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 1N459-T50R | 功能描述:DIODE GEN PURP 200V 500MA DO35 制造商:on semiconductor 系列:- 包裝:剪切帶（CT） 零件狀態(tài):最後搶購(gòu) 二極管類(lèi)型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:200V 電流 - 平均整流（Io）:500mA 不同 If 時(shí)的電壓 - 正向（Vf:1V @ 100mA 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 不同?Vr 時(shí)的電流 - 反向漏電流:25nA @ 175V 不同?Vr，F(xiàn) 時(shí)的電容:6pF @ 0V，1MHz 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 工作溫度 - 結(jié):175°C（最大） 基本零件編號(hào):1N459 標(biāo)準(zhǔn)包裝:1 |
| 1N459TR | 功能描述:整流器 High Conductance Low Leakage RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N4603 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SILICON POINT CONTACT MIXER DIODES |
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