參數(shù)資料
型號: 1N4607
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 參考電壓二極管
英文描述: Silicon Switching Diode DO-35 Glass Package
中文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
文件頁數(shù): 1/4頁
文件大?。?/td> 235K
代理商: 1N4607
Maximum Ratings
Peak Inverse Voltage @ 5μA & 0.1μA @ -55
o
C
Average Rectified Current
Continuous Forward Current
Peak Surge Current (t
peak
= 1 sec.)
BKC Power Dissipation T
L
=50
o
C, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25
o
C* Symbol Minimum
Forward Voltage Drop @ I
F
= 400 mA
Symbol
PIV
Iavg
I
Fdc
I
peak
P
tot
T
Op
T
St
Value
85 (Min).
200
200
1.0
500
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
C
-65 to +200
-65 to +200
Maximum
1.10
o
C
Unit
Volts
V
F
***
Breakdown Voltage @ I
R
= 25 μA
PIV
85
Volts
Reverse Leakage Current @ V
R
= 50 V
I
R
100
μA
Applications
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
Features
Six sigma quality
Metallurgically bonded
BKC's Sigma Bond plating
for problem free solderability
Silicon Switching Diode
DO-35 Glass Package
1N4150
1N4607
Note 1: Per Method 4031-A with I
F
= 10 mA,Vr = 6 V, R
L
= 100 Ohms. * UNLESS OTHERWISE SPECIFIED
Reverse Recovery time (note 1)
t
rr
10
nSecs
DO-35 Glass Package
Dia.
0.06-0.09"
1.53-2.28 mm
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
相關(guān)PDF資料
PDF描述
1N4608 SILICON EPITAXIAL PLANAR TYPE DIODE
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