參數(shù)資料
型號: 1N482B
廠商: MICROSEMI CORP-LAWRENCE
元件分類: 參考電壓二極管
英文描述: High Conductance DO-35 Diodes
中文描述: 0.2 A, SILICON, SIGNAL DIODE, DO-35
文件頁數(shù): 1/1頁
文件大?。?/td> 57K
代理商: 1N482B
High Conductance
DO-35 Diodes
1N4150
thru
1N486B
Absolute Maximum Ratings
Symbol
Value
Unit
Average Forward Rectified Current at T
Ambient
= 25
o
C
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)
I
AV
I
FSM
T
j
T
S
-55 to +200
Pdiss
0.65
Amp
2.0
Amps
Junction Temperature Range
-65 to +200
o
C
Storage Temperature Range
o
C
Max. Average Power Dissipation
250
mW
Characteristics
at T =
25
C
Peak
Maximum
Average Rectified
Current
(I
O
)
Amps
0.2
0.2
0.2
0.2
0.2
Maximum
Forward Voltage
Drop
(V
F
)
@ 0.1A
Volts
1.0
1.0
1.0
1.0
1.0
Maximum Leakage
Current
(I
R
) @ PIV
25
o
C 150
o
C
μA μA
0.025 5
0.025 5
0.025 5
0.025 5
0.025 5
Minimum
Saturation
Voltage
(@0.1 mA)
Volts
40
80
150
200
250
Inverse Voltage
(MIN.)
(PIV)
Volts
30
60
125
175
225
Type
1N482B
1N483B
1N484B
1N485B
1N486B
Features
Humidity proof glass
Thermally matched system
No thermal fatigue
No applications restrictions
Sigma Bond plated contacts
100% guaranteed solderability
Problem free assembly
Six Sigma quality
LL-35 MiniMELF types available
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
Use Advantages
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
DO-35 Glass Package
Dia.
0.06-0.09"
1.53-2.28 mm
1.0"
25.4 mm
(Min.)
Length
0.120-.200"
3.05-5.08-
mm
0.018-0.022"
0.458-0.558 mm
Lead Dia.
1N482B
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