參數(shù)資料
型號: 1N4935/70
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: PLASTIC, DO-41, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 325K
代理商: 1N4935/70
www.vishay.com
2
Document Number 88508
10-Oct-05
1N4933 thru 1N4937
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
Maximum instantaneous
forward voltage
at 1.0 A
VF
1.2
V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
TA= 100 °C
IR
5.0
100
A
Maximum reverse recovery
time
IF = 1.0 A, VR = 30 V,
di/dt = 50 A/s, Irr = 10 % IRM
trr
200
ns
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
12
pF
Parameter
Symbol
1N4933
1N4934
1N4935
1N4936
1N4937
Unit
Typical thermal resistance (1)
RθJA
RθJL
55
25
°C/W
Figure 1. Forward Current Derating Curves
Ambient Temperature ( °C)
A
v
erage
F
or
w
ard
Rectified
C
u
rrent
(A)
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
Capacitive Load
5.0
10
20
I(pk)
I(AV)
=
π
I(pk)
I(AV)
0.375" (9.5mm)
Lead Length
Figure 2. Maximum Non-repetitive Peak Forward Surge Current
Peak
For
w
ard
S
u
rge
C
u
rrent
(A)
1
10
100
0
10
20
30
1.0 Cycle
TA = 75 °C
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
相關PDF資料
PDF描述
1N4936/54 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
1N4936/93 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
1N4936/64 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
1N4936/70 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL
1N4937/68 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
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