參數(shù)資料
型號: 1N4937-E3/54
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 68K
代理商: 1N4937-E3/54
Document Number: 88508
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 27-Oct-09
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
Fast Switching Plastic Rectifier
1N4933 thru 1N4937
Vishay General Semiconductor
FEATURES
Fast switching for high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Compliant
to
RoHS
directive
2002/95/EC
and
in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
50 V to 600 V
IFSM
30 A
trr
200 ns
IR
5.0 μA
VF
1.2 V
TJ max.
150 °C
DO-204AL (DO-41)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
1N4933
1N4934
1N4935
1N4936
1N4937
UNIT
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
V
Maximum RMS voltage
VRMS
35
70
145
280
420
V
Maximum DC blocking voltage
VDC
50
100
200
400
600
V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA= 75 °C
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
Maximum reverse recovery current
IRM
2.0
A
Operating junction and storage temperature range
TJ, TSTG
- 50 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
1N4933
1N4934
1N4935
1N4936
1N4937
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.2
V
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
IR
5.0
μA
TA= 100 °C
100
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
trr
200
ns
Typical junction capacitance
4.0 V, 1 MHz
CJ
12
pF
相關(guān)PDF資料
PDF描述
1N4942GP-E3 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
1N4942GP/73 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
1N4942GP/4E 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
1N4942GP/71 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
1N4942GP/4G 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AL
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