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參數(shù)資料
| 型號(hào)： | 1N5253B |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 中文描述： | 在250μA低電流操作，低反向漏，低噪聲穩(wěn)壓二極管（250μA工作電流，小反向漏電流，低噪聲，齊納二極管） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 1N5253B |
1996 Apr 26
2
Philips Semiconductors
Product specication
Voltage regulator diodes
1N5225B to 1N5267B
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 3.0 to 75 V
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low-power voltage stabilizers or
voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad.
2. Tie-point temperature
≤ 75 °C.
ELECTRICAL CHARACTERISTICS
Table 1
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tj =25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb =50 °C; lead length max.;
note 1
400
mW
Lead length 8 mm; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
tp = 8.3 ms; square wave;
Tj ≤ 55 °C prior to surge
10
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
65
+200
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 200 mA; see Fig.4
1.1
V
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| 1N5256B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N5261B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N5262B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N5263B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| 1N5267B | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5253B (DO-35) | 制造商:Aeroflex 功能描述:COMMERCIAL ZENER VOLTAGE REGUL 制造商:Aeroflex / Metelics 功能描述:COMMERCIAL ZENER VOLTAGE REGULATOR DIODE - Bulk 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk |
| 1N5253B _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N5253B A0G | 功能描述:DIODE ZENER 25V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包裝:帶盒（TB） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:25V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:35 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 18V 不同 If 時(shí)的電壓 - 正向（Vf:1.1V @ 200mA 工作溫度:100°C（TJ） 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:5,000 |
| 1N5253B BK | 功能描述:DIODE ZENER 25V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱(chēng)值）（Vz）:25V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:35 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 19V 不同 If 時(shí)的電壓 - 正向（Vf）:1.1V @ 200mA 工作溫度:-65°C ~ 200°C 安裝類(lèi)型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500 |
| 1N5253B TR | 制造商:CENTRAL SEMICONDUCTOR 功能描述:DIODE ZENER 25V 500MW DO-35 |
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