參數(shù)資料
型號(hào): 1N5362BG
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 5 Watt Surmetic TM 40 Zener Voltage Regulators
中文描述: 28 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝: LEAD FREE, PLASTIC, CASE 017AA-01, 2 PIN
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 88K
代理商: 1N5362BG
1N5333B Series
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 1.2 V Max @ I
F
= 1.0 A for all types)
Device
(Note 6)
Device
Marking
Zener Voltage
(Note 7)
Zener Impedance
(Note 7)
Leakage
Current
I
R
(Note 8)
V
Z
(Note 9)
I
ZM
(Note 10)
V
Z
(Volts)
@ I
ZT
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
I
ZK
I
R
@ V
R
Min
Nom
Max
mA
mA
A Max
Volts
A
Volts
mA
1N5363B, G
1N5364B, G
1N5365B, G
1N5366B, G
1N5367B, G
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
28.5
31.35
34.2
37.05
40.85
30
33
36
39
43
31.5
34.65
37.8
40.95
45.15
40
40
30
30
30
8
140
150
160
170
190
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
22.8
25.1
27.4
29.7
32.7
3.7
3.5
3.5
3.1
2.8
0.6
0.6
0.65
0.65
0.7
158
144
132
122
110
10
11
14
20
1N5368B, G
1N5369B, G
1N5370B, G
1N5371B, G
1N5372B, G
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
44.65
48.45
53.2
57
58.9
47
51
56
60
62
49.35
53.55
58.8
63
65.1
25
25
20
20
20
25
27
35
40
42
210
230
280
350
400
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
35.8
38.8
42.6
45.5
47.1
2.7
2.5
2.3
2.2
2.1
0.8
0.9
1.0
1.2
1.35
100
93
86
79
76
1N5373B, G
1N5374B, G
1N5375B, G
1N5376B, G
1N5377B, G
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
64.6
71.25
77.9
82.65
86.45
68
75
82
87
91
71.4
78.75
86.1
91.35
95.55
20
20
15
15
15
44
45
65
75
75
500
620
720
760
760
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
51.7
56
62.2
66
69.2
2.0
1.9
1.8
1.7
1.6
1.52
1.6
1.8
2.0
2.2
70
63
58
54.5
52.5
1N5378B, G
1N5379B, G
1N5380B, G
1N5381B, G
1N5382B, G
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
95
100
110
120
130
140
105
115.5
126
136.5
147
12
12
10
10
8
90
125
170
190
230
800
1000
1150
1250
1500
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
76
83.6
91.2
98.8
106
1.5
1.4
1.3
1.2
1.2
2.5
2.5
2.5
2.5
2.5
47.5
43
39.5
36.6
34
104.5
114
123.5
133
1N5383B, G
1N5384B, G
1N5385B, G
1N5386B, G
1N5387B, G
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
142.5
152
161.5
171
180.5
150
160
170
180
190
157.5
168
178.5
189
199.5
8
8
8
5
5
330
350
380
430
450
1500
1650
1750
1750
1850
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
114
122
129
137
144
1.1
1.1
1.0
1.0
0.9
3.0
3.0
3.0
4.0
5.0
31.6
29.4
28
26.4
25
1N5388B, G
1N5388B
190
200
210
5
480
1850
1
0.5
152
0.9
5.0
23.6
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended choices for future use and best overall value.
6.
TOLERANCE AND TYPE NUMBER DESIGNATION
The JEDEC type numbers shown indicate a tolerance of
±
5%.
7.
ZENER VOLTAGE (V
Z
) and IMPEDANCE (I
ZT
and I
ZK
)
Test conditions for zener voltage and impedance are as follows: I
is applied 40
±
10 ms prior to reading. Mounting contacts are located 3/8
to 1/2
from the inside edge of mounting clips to the body of the diode (T
A
= 25
°
C +8
°
C, 2
°
C).
8.
SURGE CURRENT (I
)
Surge current is specified as the maximum allowable peak, nonrecurrent squarewave current with a pulse width, PW, of 8.3 ms. The data
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located
as specified in Note 7 (T
A
= 25
°
C +8
°
C, 2
°
C).
9.
VOLTAGE REGULATION ( V
)
The conditions for voltage regulation are as follows: V
Z
measurements are made at 10% and then at 50% of the I
Z
max value listed in the
electrical characteristics table. The test current time duration for each V
Z
measurement is 40
±
10 ms. Mounting contact located as specified
in Note 7 (T
A
= 25
°
C +8
°
C, 2
°
C).
10.
MAXIMUM REGULATOR CURRENT (I
ZM
)
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the Bsuffix device. The actual
I
ZM
for any device may not exceed the value of 5 watts divided by the actual V
Z
of the device. T
L
= 75
°
C at 3/8
maximum from the device
body.
The “G’’ suffix indicates PbFree package available.
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參數(shù)描述
1N5362BG 制造商:ON Semiconductor 功能描述:ZENER DIODE 5W 28V 017AA
1N5362BRL 功能描述:穩(wěn)壓二極管 28V 5W RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N5362BRLG 功能描述:穩(wěn)壓二極管 28V 5W RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N5362B-T 功能描述:穩(wěn)壓二極管 5.0W 28V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel
1N5362B-TP 功能描述:穩(wěn)壓二極管 5.0W 28V RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel