參數(shù)資料
型號(hào)： 1N5365B/TR8
廠商： MICROSEMI CORP
元件分類： 齊納二極管
英文描述： 36 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
封裝： PLASTIC, T-18, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 356K
代理商： 1N5365B/TR8
Silicon 5 Watt Zener Diodes
WWW
.Microse
m
i
.CO
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S C O T TS DALE DIVISION
1N5333B thru 1N5388B, e3
1N5
333
B
thr
u
1N53
88
B
*ELECTRICAL CHARACTERISTICS @ 25oC
REGULATOR
VOLTAGE
(VZ)
TEST
CURRENT
(IZT)
MAXIMUM
DYNAMIC
IMPEDANCE
(ZZ)
(A&B Suffix)
MAXIMUM
REVERSE
CURRENT
(IR)
IR TEST
VOLTAGE
(VR)
(Non-Suffix &
A Suffix)
IR TEST
VOLTAGE
(VR)
(B,C,D Suffix)
MAXIMUM
REGULATOR
CURRENT
(IZM)
(B,C,D Suffix)
MAXIMUM
DYNAMIC KNEE
IMPEDANCE
ZZK @ 1.0 mA
(A,B,C,D Suffix)
MAXIMUM
SURGE
CURRENT
(IZSM)
MAXIMUM
VOLTAGE
REGULATION
(
ΔV
Z)
(A,B,C,D
Suffix)
TYPE
NUMBER
V
mA dc
OHMS
μA
V
mA
OHMS
AMPS
VOLTS
1N5333B
1N5334B
1N5335B
1N5336B
1N5337B
3.3
3.6
3.9
4.3
4.7
380
350
320
290
260
3.0
2.5
2.0
300
150
50
10
5.0
1.0
1440
1320
1220
1100
1010
400
500
450
20
18.7
17.6
16.4
15.3
0.85
0.80
0.54
0.49
0.44
1N5338B
1N5339B
1N5340B
1N5341B
1N5342B
5.1
5.6
6.0
6.2
6.8
240
220
200
175
1.5
1.0
10
1.0
2.0
3.0
4.9
1.0
2.0
3.0
5.2
930
865
790
765
700
400
300
200
14.4
13.4
12.7
12.4
11.5
0.39
0.25
0.19
0.10
0.15
1N5343B
1N5344B
1N5345B
1N5346B
1N5347B
7.5
8.2
8.7
9.1
10
175
150
125
1.5
2.0
10
7.5
5.0
5.4
5.9
6.25
6.6
7.2
5.7
6.2
6.6
6.9
7.6
630
580
545
520
475
200
150
125
10.7
10
9.5
9.2
8.6
0.15
0.20
0.22
1N5348B
1N5349B
1N5350B
1N5351B
1N5352B
11
12
13
14
15
125
100
75
2.5
5.0
2.0
1.0
8.0
8.6
9.4
10.1
10.8
8.4
9.1
9.9
10.6
11.5
430
395
365
340
315
125
100
75
8.0
7.5
7.0
6.7
6.3
0.25
1N5353B
1N5354B
1N5355B
1N5356B
1N5357B
16
17
18
19
20
75
70
65
2.5
3.0
1.0
0.5
11.5
12.2
13
13.7
14.4
12.2
12.9
13.7
14.4
15.2
295
280
264
250
237
75
6.0
5.8
5.5
5.3
5.1
0.30
0.35
0.40
1N5358B
1N5359B
1N5360B
1N5361B
1N5362B
22
24
25
27
28
50
3.5
4.0
5.0
6.0
0.5
15.8
17.3
18
19.4
20.1
16.7
18.2
19
20.6
21.2
216
198
190
176
170
75
100
110
120
130
4.7
4.4
4.3
4.1
3.9
0.45
0.55
0.60
1N5363B
1N5364B
1N5365B
1N5366B
1N5367B
30
33
36
39
43
40
30
8.0
10
11
14
20
0.5
21.6
23.8
25.9
28.1
31
22.8
25.1
27.4
29.7
32.7
158
144
132
122
110
140
150
160
170
190
3.7
3.5
3.3
3.1
2.8
0.60
0.65
0.70
1N5368B
1N5369B
1N5370B
1N5371B
1N5372B
47
51
56
60
62
25
20
25
27
35
40
42
0.5
33.8
36.7
40.3
43
44.6
35.8
38.8
42.6
45.5
47.1
100
93
86
79
76
210
230
280
350
400
2.7
2.5
2.3
2.2
2.1
0.80
0.90
1.00
1.20
1.35
1N5373B
1N5374B
1N5375B
1N5376B
1N5377B
68
75
82
87
91
20
15
44
45
65
75
0.5
49
54
59
63
65.5
51.7
56
62.2
66
69.2
70
63
58
54.5
52.5
500
620
720
760
2.0
1.9
1.8
1.7
1.6
1.50
1.60
1.80
2.00
2.20
1N5378B
1N5379B
1N5380B
1N5381B
1N5382B
100
110
120
130
140
12
10
8.0
90
125
170
190
230
0.5
72
79.2
86.4
93.6
101
76
83.6
91.2
98.8
106
47.5
43
39.5
36.6
34
800
1000
1150
1250
1500
1.5
1.4
1.3
1.2
2.30
2.50
1N5383B
1N5384B
1N5385B
1N5386B
1N5387B
1N5388B
150
160
170
180
190
200
8.0
5.0
330
350
380
430
450
480
0.5
108
115
122
130
137
144
114
122
129
137
144
152
31.6
29.4
28
26.4
25
23.6
1500
1650
1750
1850
1.1
1.0
0.9
3.00
4.00
5.00
*JEDEC Registered Data.
NOTE 1: Devices listed above with B suffix have ±5% tolerance, A suffix designates ±10% tolerance, C suffix designates ±2%
tolerance, and D suffix designates ±1% tolerance. No suffix designates ±20%.
NOTE 2: Zener voltage (Vz) is measured at TL = 25
oC (+8, -2oC). Voltage measurement performed at 40 ±10 milliseconds
after application of dc current.
NOTE 3: The zener impedance is derived from 1 kHz ac voltage resulting from an ac current modulation having an rms value
equal to 10% of the dc zener current (IZT or IZK) superimposed on IZT or IZK. See Micro Note 202 for zener impedance
variation with different operating currents.
NOTE 4: The maximum current (IZM) shown is for a ±5% tolerance devices. The IZM for other tolerances can be calculated using
the formula: IZM = P/VZM where VZM is the VZ at the high end of the voltage tolerance specified and P is the rated power
,
for the method of mounting.
e3
NOTE 5: The surge current (IZSM) is specified as the maximum peak of a non-recurrent half-sine wave of 8.3 ms duration.
NOTE 6: Voltage regulation (
ΔV
Z) is the difference between the voltage measured at 10% and 50% of IZM.
Microsemi
Scottsdale Division
Page 2
Copyright
2008
8-06-2008 REV D
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料
PDF描述
1N5365BE3 36 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5366AE3/TR8 39 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5366AE3 39 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5366DE3 39 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
1N5367A/TR8 43 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5365C/TR12 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 36V 2% T-18
1N5365C/TR8 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 36V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5.0W 36V 2% T-18
1N5365CE3/TR12 功能描述:DIODE ZENER 36V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:36V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:11 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 25.9V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:3,000
1N5365CE3/TR13 功能描述:DIODE ZENER 36V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:36V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:11 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 25.9V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:1,250
1N5365CE3/TR8 功能描述:DIODE ZENER 36V 5W T18 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:36V 容差:±2% 功率 - 最大值:5W 阻抗（最大值）（Zzt）:11 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:500nA @ 25.9V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 1A 工作溫度:-65°C ~ 150°C 安裝類型:通孔 封裝/外殼:T-18，軸向 供應(yīng)商器件封裝:T-18 標(biāo)準(zhǔn)包裝:1,000
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