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參數(shù)資料
| 型號： | 1N5400 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | 3 AMP PLASTIC SILICON RECTIFIER |
| 中文描述： | 3安培塑料一般整流 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 1N5400 |
1N5400 thru 1N5408
Features
- Diffused Junction
- High Current Capability and Low Forward
Voltage Drop
- Surge Overload Rating to 200A Peak
- Low Reverse Leakage Current
- Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
- Case: DO-201AD, Molded Plastic
- Terminals: Solderable per MIL-STD-202,
Method 208
- Polarity: Cathode Band
- Weight: 1.1 grams (approx.)
3.0A Rectifier
www.comchiptech.com
COMCHIP
MDS0312006A
Page 1
Reverse Voltage: 50 to 1000V
Forward Current: 3.0A
DO-201AD
Dimensions in inches and (millimeters)
0.189 (4.8)
0.209 (5.3)
Dia.
0.047 (1.2)
0.051 (1.3)
Dia.
1.0 (25.4)
Min.
0.284 (7.2)
0.374 (9.5)
1.0 (25.4)
Min.
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
1N
5400
1N
5401
1N
5402
1N
5404
1N
5406
1N
5407
1N
5408
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@ TA = 105
°C
(Note 1)
IO
3.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
IFSM
200
A
Forward Voltage
@ IF = 3.0A
VFM
1.0
V
Peak Reverse Current
@ TA = 25
°C
at Rated DC Blocking Voltage
@ TA = 150
°C
IRM
10
100
mA
Typical Junction Capacitance
(Note 2)
Cj
50
25
pF
Typical Thermal Resistance Junction to Ambient
RqJA
15
K/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
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