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參數(shù)資料
| 型號： | 1N5420US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS |
| 中文描述： | 3 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, D-5B, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 170K |
| 代理商： | 1N5420US |
VOIDLESS-HERMETICALLY SEALED
SURFACE MOUNT FAST RECOVERY
GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2007
4-27-2007 REV B
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N5415US thru 1N5420US
1N5415
thru
1N5420
SYMBOLS & DEFINITIONS
Symbol
Definition
VBR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range excluding all transient voltages (ref JESD282-B).
IO
Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-
wave input and a 180 degree conduction angle.
VF
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified decay point after a peak reverse
current occurs.
GRAPHS
FIGURE 1 – Typical Reverse Current vs. PIV
FIGURE 2 – Typical Forward Current vs.
Forward Voltage
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