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參數(shù)資料
| 型號： | 1N5466A |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 18 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 封裝： | GLASS PACKAGE-2 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 12K |
| 代理商： | 1N5466A |
KNOX SEMICONDUCTOR, INC.
P.O. BOX 609 ROCKPORT, MAINE 04856
2072366076
FAX 2072369558
-25-
GENERAL PURPOSE ABRUPT VARACTOR DIODES
1N5441 TO 1N5476
TYPE
CAPACITANCE
TUNING RATIO
MIN QUALITY FACTOR
NUMBER
@ - 4 Vdc 1 MHz
C2 V / C30V
Q @ - 4 Vdc
(pF)
MIN
MAX
f = 50 MHz
1N5441
6.8
2.5
3.1
450
1N5442
8.2
2.5
3.1
450
1N5443
10.0
2.6
3.1
400
1N5444
12.0
2.6
3.1
400
1N5445
15.0
2.6
3.1
400
1N5446
18.0
2.6
3.1
350
1N5447
20.0
2.6
3.1
350
1N5448
22.0
2.6
3.2
350
1N5449
27.0
2.6
3.2
350
1N5450
33.0
2.6
3.2
350
1N5451
39.0
2.6
3.2
300
1N5452
47.0
2.6
3.2
250
1N5453
56.0
2.6
3.3
200
1N5454
68.0
2.7
3.3
175
1N5455
82.0
2.7
3.3
175
1N5456
100.0
2.7
3.3
175
1N5461
6.8
2.7
3.1
600
1N5462
8.2
2.8
3.1
600
1N5463
10.0
2.8
3.1
550
1N5464
12.0
2.8
3.1
550
1N5465
15.0
2.8
3.1
550
1N5466
18.0
2.9
3.1
500
1N5467
20.0
2.9
3.1
500
1N5468
22.0
2.9
3.2
500
1N5469
27.0
2.9
3.2
500
1N5470
33.0
2.9
3.2
500
1N5471
39.0
2.9
3.2
450
1N5472
47.0
2.9
3.2
400
1N5473
56.0
2.9
3.3
300
1N5474
68.0
2.9
3.3
250
1N5475
82.0
2.9
3.3
225
1N5476
100.0
2.9
3.3
200
Package style
DO-7
DC Power Dissipation
@ Ta = 25°C
400 mW
Min Reverse Breakdown Voltage
@ IR = 10 A
30 V
Max Reverse Current (IR)
@ 25 Vdc
0.02 A
Max Reverse Current (IR2)
@ 25 Vdc 150°C
20 A
Temp. Coefficient of Capacitance
@ Vr -4 Vdc, Ta -65° to + 85°c
.04% /°C
Operating Temperature (Topr)
-65 to +175°C
Storage Temperature (Tstg)
-65 to +200°C
Capacitance Tolerance
Standard Device
±20%
Suffix A
±10%
Suffix B
±5%
Suffix C
±2%
DENOTES MILITARY APPROVAL FOR JAN - JANTX – JANTXV (B & C Tolerance only)
相關PDF資料 |
PDF描述 |
|---|---|
| 1N5467B | 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5467C | 20 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5469A | 27 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5470 | 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
| 1N5471 | 39 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, DO-7 |
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|---|---|
| 1N547 | 制造商:n/a 功能描述:1N547 制造商:General Electric Company 功能描述: |
| 1N5470BJTX | 制造商:TDY 功能描述:1N5470BJTX |
| 1N5517 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
| 1N5518 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SCHOTTKY RECTIERS SILICON RECTIFIER DIODES |
| 1N5518_03 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:LOW REVERSE LEAKAGE CHARACTERISTICS |
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