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參數(shù)資料
| 型號： | 1N5625GP/92 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 293K |
| 代理商： | 1N5625GP/92 |
1N5624GP thru 1N5627GP
Document Number 88524
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
200 V to 800 V
IFSM
125 A
IR
5.0 A
VF
0.95 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5624GP
1N5625GP
1N5626GP
1N5627GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
* Maximum DC blocking voltage
VDC
200
400
600
800
V
* Maximum average forward rectified current
0.375” (9.5 mm) lead length at TA = 70 °C
IF(AV)
3.0
A
* Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
125
A
Maximum full load reverse current, full cycle average
0.375” (9.5 mm) lead length at TA = 70 °C
IR(AV)
200
A
* Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5625GP/100 | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5625GP/70 | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5626GP/72 | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5626GP/53 | 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 1N5627GP/68 | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5625GP-E3/1 | 功能描述:整流器 400 Volt 3.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5625GP-E3/4 | 功能描述:整流器 3.0 Amp 400 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5625GP-E3/51 | 功能描述:整流器 3.0 Amp 400 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5625GP-E3/54 | 功能描述:整流器 3.0 Amp 400 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5625GP-E3/73 | 功能描述:DIODE GEN PURPOSE DO204AC 制造商:vishay semiconductor diodes division 系列:* 零件狀態(tài):停產(chǎn) 標(biāo)準(zhǔn)包裝:2,000 |
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