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參數(shù)資料
| 型號(hào)： | 1N5627GP/70 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 293K |
| 代理商： | 1N5627GP/70 |
1N5624GP thru 1N5627GP
Document Number 88524
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
Pat
ente
d*
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV)
3.0 A
VRRM
200 V to 800 V
IFSM
125 A
IR
5.0 A
VF
0.95 V
Tj max.
175 °C
Features
Superectifier structure for High Reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
1N5624GP
1N5625GP
1N5626GP
1N5627GP
Unit
* Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
V
* Maximum DC blocking voltage
VDC
200
400
600
800
V
* Maximum average forward rectified current
0.375” (9.5 mm) lead length at TA = 70 °C
IF(AV)
3.0
A
* Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
125
A
Maximum full load reverse current, full cycle average
0.375” (9.5 mm) lead length at TA = 70 °C
IR(AV)
200
A
* Operating junction and storage temperature range
TJ, TSTG
- 65 to + 175
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5627GP-E3/1 | 功能描述:整流器 800 Volt 3.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5627GP-E3/4 | 功能描述:整流器 3.0 Amp 800 Volt Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5627GP-E3/51 | 功能描述:整流器 800 Volt 3.0 Amp Glass Passivated RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5627GP-E3/54 | 功能描述:整流器 3.0 Amp 800 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 1N5627GP-E3/73 | 功能描述:DIODE GEN PURP 800V 3A DO201AD 制造商:vishay semiconductor diodes division 系列:- 包裝:帶盒（TB） 零件狀態(tài):有效 二極管類型:標(biāo)準(zhǔn) 電壓 - DC 反向（Vr）（最大值）:800V 電流 - 平均整流（Io）:3A 不同 If 時(shí)的電壓 - 正向（Vf）:1V @ 3A 速度:標(biāo)準(zhǔn)恢復(fù) >500ns，> 200mA（Io） 反向恢復(fù)時(shí)間（trr）:3μs 不同?Vr 時(shí)的電流 - 反向漏電流:200μA @ 800V 不同?Vr，F(xiàn) 時(shí)的電容:40pF @ 4V，1MHz 安裝類型:通孔 封裝/外殼:DO-201AD，軸向 供應(yīng)商器件封裝:DO-201AD 工作溫度 - 結(jié):-65°C ~ 175°C 標(biāo)準(zhǔn)包裝:1,000 |
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