參數(shù)資料
型號: 1N5630AB
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
封裝: HERMETIC SEALED, METAL PACKAGE-2
文件頁數(shù): 2/4頁
文件大?。?/td> 212K
代理商: 1N5630AB
Silicon Avalanche Diodes
314
www .littelfuse .com
100
10
1
0.1
1
s10s
100
1ms
10ms
Pulse Time (tp)
Peak
Pulse
Power
-
Pp
(kW
)
Exponential wave-form
Square wave-pulse
s
100ns
Figure 3 - Peak Pulse Power vs. Pulse Time
0
°C50°C
100
°C150°C
200
°C
Tamb
°C
100%
50%
0
Permissable
area of
operation
0
°C50°C
100
°C150°C
200
°C
Tamb
°C
W
1.0
0.75
0.50
0.25
0
Permissable
area of
operation
Figure 2 - Continuous D.C. Power Derating
CurveContinuous d.c. power dissipation
Figure 1 - Peak Power Derating Curve
Peak pulse power in percent of 25C rating
Measured @
Zero Bias
Measured at
Stand-Off
Voltage (VR)
Reverse Voltage, Volts V(BR)
Cj (pf)
1.0 2
510 20
5
0 100 200
20,000
10,000
6000
4000
2000
1000
800
600
400
200
100
80
60
40
30
10
Figure 4 - Typical Junction Capacitance
1500 Watt Metal Axial Leaded Transient Voltage Suppressors
1N56 Series
相關(guān)PDF資料
PDF描述
1N5630B 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
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