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參數(shù)資料
| 型號(hào)： | 1N5768 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | MONOLITHIC AIR ISOLATED DIODE ARRAY |
| 中文描述： | 0.3 A, 8 ELEMENT, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, CERAMIC, FLAT PACK-10 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 19K |
| 代理商： | 1N5768 |
A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
Phone: 617-924-9280
Fax: 617-924-1235
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
FEATURES:
HERMETIC CERAMIC PACKAGE
Bv > 60V at 10uA
Ir < 100nA at 40V
C < 4.0 pF
Absolute Maximum Ratings:
Symbol
Parameter
Limit
Unit
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3
Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
60
300
500
400
500
Vdc
mAdc
mAdc
mW
mW
-65 to +150 °C
-65 to +200 °C
Symbol Parameter
Conditions
Min
Max
Unit
Vf1
Vf2
IR1
Ct
tfr
trr
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1011.PDF Rev - 11/25/98
Forward Voltage
Forward Voltage
Reverse Current
Capacitance (pin to pin)
Forward Recovery Time
Reverse Recovery Time
If = 100mAdc *1
If = 500mAdc *1
VR = 40 Vdc
VR = 0 Vdc ; f = 1 MHz
If = 500mAdc
If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
1
Vdc
Vdc
uAdc
pF
ns
ns
1.5
0.1
4.0
40
20
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
1N5768
PACKAGE OUTLINE
MAX
.240
.370
.240
.290
.019
.010
MIN
BSC
.045
.006
.003
.370
.240
.260
.280
MAX
.050
.005
.090
.030
2
3
4
5
6
7
8
9
10
1: NOT CONNECTED
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| 1N5770 | MONOLITHIC AIR ISOLATED DIODE ARRAY |
| 1N5772 | MONOLITHIC AIR ISOLATED DIODE ARRAY |
| 1N5774 | MONOLITHIC AIR ISOLATED DIODE ARRAY |
| 1N5796 | GENERAL PURPOSE SILICON DIODES |
| 1N5195 | GENERAL PURPOSE SILICON DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5768_09 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:ISOLATED DIODE ARRAY |
| 1N5768_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options |
| 1N5770 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 60V 0.5A 10PIN CFLATPACK - Bulk |
| 1N5770_1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options |
| 1N5772 | 制造商:Microsemi Corporation 功能描述:ULTRA FAST RECOVERY RECTFR 60V 0.3A 10PIN CFLATPACK - Bulk |
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