參數(shù)資料
型號: 1N5819M
廠商: DIODES INC
元件分類: 參考電壓二極管
英文描述: 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
中文描述: 1 A, 40 V, SILICON, SIGNAL DIODE
封裝: GLASS, MELF-2
文件頁數(shù): 1/2頁
文件大小: 59K
代理商: 1N5819M
D
S
13001 Rev. D-2
1 of 2
1N5817M/1N5818M/1N5819M
High Current Capability
Low Forward Voltage Drop
Guard Ring for Transient Protection
Glass Package for High Reliability
Packaged for Surface Mount Applications
Mechanical Data
Features
Case: MELF, Glass
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: Cathode band
Approx Weight: 0.25 gram
Mounting Position: Any
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
1N5817M / 1N5818M / 1N5819M
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIER
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at V
R
= 4.0V, f = 1.0MHz.
Characteristic
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
1N5817M
1N5818M
1N5819M
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
20
30
40
V
RMS Reverse Voltage
Maximum Average Forward Rectified Current
14
21
28
V
@T
T
= 90°C (Note 1)
I
O
1.0
A
Maximum Forward Surge Current. Half Cycle @60Hz
Superimposed on rated load, JEDEC Method
Maximum Forward Voltage Drop
I
FSM
25
A
@ I
F
= 1.0A
@ I
F
= 3.0A
V
F
0.450
0.750
0.550
0.875
0.600
0.900
V
Maximum Reverse Leakage Current @ V
RRM
@ T
A
= 25°C
@ T
A
= 100°C
I
R
1.0
10
mA
Typical Thermal Resistance, Junction to Ambient (Note 1)
Typical Junction Capacitance (Note 2)
Storage and Operating Temperature Range
R
JA
C
j
T
j
, T
STG
130
110
K/W
pF
°C
-60 to +125
MELF
Min
Dim
A
B
C
All Dimensions in mm
Max
4.80
5.20
2.40
2.60
0.55 Nominal
C
A
B
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