參數(shù)資料
型號: 1N5821/73-E3
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 2/4頁
文件大?。?/td> 180K
代理商: 1N5821/73-E3
www.vishay.com
2
Document Number 88526
13-Jul-05
1N5820, 1N5821 & 1N5822
Vishay General Semiconductor
Electrical Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
Thermal Characteristics
TA = 25 °C unless otherwise specified
Notes:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7 mm) lead length with
2.5 x 2.5" (63.5 x 63.5 mm) copper pad
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbols
1N5820
1N5821
1N5822
Units
Maximum instantaneous forward voltage
at 3.0 (1)
VF
0.475
0.500
0.525
V
Maximum instantaneous forward voltage
at 9.4 (1)
VF
0.850
0.900
0.950
V
Maximum average reverse current at rated DC
blocking voltage (1)
TA = 25 °C
TA = 100 °C
IR
2.0
20
mA
Parameter
Symbols
1N5820
1N5821
1N5822
Units
Typical thermal resistance (1)
RθJA
RθJL
40
10
°C/W
Figure 1. Forward Current Derating Curve
0
20
40
60
80
100
120
140
0
1.0
2.0
3.0
4.0
Average
Forward
Current
(A)
Lead Temperature (°C)
Resistive or Inductive Load
0.375" (9.5mm) lead length
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
1
10
100
20
30
40
10
70
80
60
50
Peak
Forward
Surge
Current
(A)
TJ =TJ max.
8.3ms single half sine-wave
Number of Cycles at 60 Hz
相關PDF資料
PDF描述
1N5822/73 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/72 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/71 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/58 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
1N5822/62 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD
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