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參數(shù)資料
| 型號(hào)： | 1N6069 |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | BIDIRECTIONAL TRANSIENT ABSORPTION ZENER |
| 中文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-202AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-13, 2 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 135K |
| 代理商： | 1N6069 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
1500 WATT BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPESSOR
Qualified per MIL-PRF-19500/507
T4-LDS-0097 Rev. 1 (082644)
Page 4 of 6
ELECTRICAL CHARACTERISTICS @ 25
oC (Test Both Polarities)
Rated
Standoff
Voltage
VWM
(NOTE 1)
Breakdown
Voltage
V(BR)
V(BR) min
V(BR) max
@ I(BR)
Maximum
Clamping
Voltage
VC @ IPP
Maximum
Standby
Current
ID @ VWM
Maximum
Peak Pulse
Current
IPP
(See Fig. 2)
Maximum
Temperature
Coefficient of
V(BR)
JEDEC
Type
No.
Volts
mA
Volts
μA
Amps
Volts
1N6062
*1N6062A
1N6063
*1N6063A
73.0
75.0
81.0
82.0
81.9
86.5
90.0
95.0
100.0
95.5
110.0
105.0
1
131.0
125.0
144.0
137.0
5
11.4
12.0
10.4
11.0
.106
1N6064
*1N6064A
1N6065
*1N6065A
90.0
94.0
95.0
100.0
99.0
105.0
108.0
114.0
121.0
116.0
132.0
126.0
1
158.0
152.0
176.0
168.0
5
9.5
9.9
8.5
8.9
.107
1N6066
*1N6066A
1N6067
*1N6067A
105.0
110.0
121.0
128.0
117.0
124.0
135.0
143.0
137.0
165.0
158.0
1
191.0
182.0
223.0
213.0
5
7.8
8.2
6.7
7.0
.107
.108
1N6068
*1N6068A
1N6069
*1N6069A
137.0
145.0
150.0
153.0
162.0
171.0
187.0
179.0
198.0
189.0
1
258.0
245.0
274.0
261.0
5
5.8
6.1
5.5
5.7
.108
1N6070
*1N6070A
1N6071
*1N6071A
155.0
160.0
165.0
170.0
171.0
181.0
180.0
190.0
210.0
200.0
220.0
210.0
1
292.0
278.0
308.0
294.0
5
5.1
5.4
4.9
5.1
.108
1N6072
*1N6072A
175.0
185.0
198.0
209.0
242.0
231.0
1
344.0
328.0
5
4.3
4.6
.108
* Also available in military qualified types by adding the prefix JAN, JANTX or JANTXV per MIL-PRF-
19500/507.
NOTE 1:
A TVS is normally selected according to the rated “Standoff Voltage” VWM that should be
equal to or greater than the dc or continuous peak operating voltage level.
SYMBOLS & DEFINITIONS
Symbol
Definition
VWM
Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. (See Note 1 above.)
V(BR)
Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25oC
VC
Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected
to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the
combination of voltage rise due to both the series resistance and thermal rise and positive temperature
coefficient (
α
V(BR))
IPP
Peak Pulse Current: The peak current during the impulse (See Figure 2)
PPP
Peak Pulse Power: The pulse power as determined by the product of VC and IPP
ID
Standby Current: The current at the standoff voltage (VWM)
I(BR)
Breakdown Current: The current used for measuring Breakdown Voltage (V(BR))
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6069A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 150V 1.5KW 2PIN DO-13 - Bulk |
| 1N6069AJANTX | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Bi-Dir 150V 1.5KW 2-Pin DO-13 |
| 1N607 | 制造商:General Electric Company 功能描述: |
| 1N6070 | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 155V 1.5KW 2PIN DO-13 - Bulk |
| 1N6070A | 制造商:Microsemi Corporation 功能描述:TVS SGL BI-DIR 160V 1.5KW 2PIN DO-13 - Bulk |
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