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參數(shù)資料
| 型號： | 1N6266 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs INFRARED EMITTING DIODE |
| 中文描述： | 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | HERMETICALLY SEALED, TO-46, 2 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 207K |
| 代理商： | 1N6266 |
0.040 (1.02)
0.100 (2.54)
0.050 (1.27)
45°
0.040 (1.02)
1
3
0.030 (0.76)
NOM
0.184 (4.67)
0.209 (5.31)
1.00 (25.4)
MIN
0.255 (6.48)
ANODE
(CASE)
0.020 (0.51) 2X
1. Derate power dissipation linearly 1.70 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 13.0 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning
agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension
PACKAGE DIMENSIONS
FEATURES
Good optical to mechanical alignment
Mechanically and wavelength matched to the
TO-18 series phototransistor
Hermetically sealed package
High irradiance level
(*) Indicates JEDEC registered values
Parameter
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
I
F
V
R
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
100
10
3
170
1.3
Unit
°C
°C
°C
°C
mA
A
V
mW
W
Operating Temperature
*Storage Temperature
*Soldering Temperature (Iron)
(3,4,5 and 6)
*Soldering Temperature (Flow)
(3,4 and 6)
*Continuous Forward Current
*Forward Current (pw, 1μs; 200Hz)
*Reverse Voltage
*Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1N6266
GaAs INFRARED EMITTING DIODE
DESCRIPTION
The 1N6266 is a 940 nm LED in a
narrow angle, TO-46 package.
ANODE
(Connected
To Case)
3
1
CATHODE
SCHEMATIC
PARAMETER
*Peak Emission Wavelength
Emission Angle at 1/2 Power
Forward Voltage
*Reverse Leakage Current
*Radiant Intensity
Rise Time 0-90% of output
Fall Time 100-10% of output
TEST CONDITIONS
I
F
= 100 mA
SYMBOL
MIN
935
—
—
—
25
—
—
TYP
—
±10
—
—
—
1.0
1.0
MAX
955
—
1.7
10
—
—
—
UNITS
nm
Deg.
D
P
0
V
F
I
R
Ie
t
r
t
f
I
F
= 100 mA
V
R
= 3 V
I
F
= 100 mA
V
μA
mW/sr
μs
μs
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C) (All measurements made under pulse conditions)
2001 Fairchild Semiconductor Corporation
DS300278
3/12/01
1 OF 7
www.fairchildsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
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| 1N6266 | 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO |
| 1N6266_Q | 功能描述:紅外發(fā)射源 25mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| 1N6267 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:TRANSZORB Transient Voltage Suppressors |
| 1N6267/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 6.8V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6267/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 6.8V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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