參數(shù)資料
型號： 1N6295CE3
廠商： VISHAY SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件頁數(shù)： 1/7頁
文件大?。?/td> 118K
代理商： 1N6295CE3
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
www.vishay.com
Document Number: 88301
Revision: 20-Sep-07
106
TRANSZORB Transient Voltage Suppressors
FEATURES
Glass passivated chip junction
Available in uni-directional and bi-directional
1500 W peak pulse power capability with a
10/1000 s waveform, repetitive rate (duty cycle):
0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
DEVICES FOR BI-DIRECTION APPLICATIONS
For
bi-directional
types,
use
C
or
CA
suffix
(e.g. 1.5KE440CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VBR uni-directional
6.8 V to 540 V
VBR bi-directional
6.8 V to 440 V
PPPM
1500 W
PD
6.5 W
IFSM (uni-directional only)
200 A
TJ max.
175 °C
Case Style 1.5KE
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) VF = 3.5 V for 1.5KE220 (A) and below; VF = 5.0 V for 1.5KE250(A) and above
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1) (Fig. 1)
PPPM
1500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)
PD
6.5
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A for uni-directional only (3)
VF
3.5/5.0
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料
PDF描述
1N6296HE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6297CAE3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1N6297HE3 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6298CAE3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1N6299CAE3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6296A 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 100V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6296A/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6296A/4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6296A/54 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6296A-E3/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 110V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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