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參數(shù)資料
| 型號(hào)： | 1N6373/4F |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 93K |
| 代理商： | 1N6373/4F |
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88356
Revision: 12-Feb-09
2
Notes:
(1) “C” Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual VC (Clamping Voltage) to the
VBR (Breakdown Voltage) as measured on a specific device
Note:
(1) Automotive grade AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2)
ICTE-5 (2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
1N6378
ICTE-18
18.0
21.2
2.0
24.2
25.2
50
BI-DIRECTIONAL TYPES
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE-18C
18.0
21.2
2.0
24.8
25.5
50
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE-5-E3/54
0.968
54
1400
13" diameter paper tape and reel
ICTE-5HE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
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PDF描述 |
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| 1N6374/68 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6374/58 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6374/70 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6375/68 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 1N6375/4G | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6373A | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Zener Transient Voltage Suppressors Unidirectional and Bidirectional |
| 1N6373-E3/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 5.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6373-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 5.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6373-E3/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 5.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6373-E3/73 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 5.0V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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