參數(shù)資料
型號: 1N6380G
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
中文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: LEAD FREE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 85K
代理商: 1N6380G
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
25
°
C
P
PK
1500
W
Steady State Power Dissipation @ T
L
75
°
C, Lead Length = 3/8
Derated above T
L
= 75
°
C
P
D
5.0
20
W
mW/
°
C
Thermal Resistance, JunctiontoLead
R
JL
20
°
C/W
Forward Surge Current (Note 2)
@ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
相關(guān)PDF資料
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1N6380RL4 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
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1N6380G 制造商:ON Semiconductor 功能描述:TVS Diode
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1N6380RL4G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 42.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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1N6381G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 52.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C