參數(shù)資料
型號： 1N6380RL4
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
中文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC, MOSORB, CASE 41A-04, 2 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 85K
代理商： 1N6380RL4
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3)
= 100 A)
JEDEC
Device
(ON Device)
Device
Marking
V
RWM
(Note 4)
I
R
@
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 6)
V
C
(Volts)
(Note 6)
V
BR
V
BR
(Note 5
)
(Volts)
@ I
T
V
C
I
PP
@ I
PP
=
1 A
@ I
PP
=
10 A
(Volts)
( A)
Min
Nom
Max
(mA)
(Volts)
(A)
(mV/
°
C)
1N6373, G
(MPTE5, G)
1N6373
MPTE5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
1N6374, G
(MPTE8, G)
1N6374
MPTE8
8.0
25
9.4
1.0
15
100
11.3
11.5
8.0
1N6375, G
(MPTE10,G)
1N6375
MPTE10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
12
1N6376, G
(MPTE12, G)
1N6376
MPTE12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
14
1N6377, G
(MPTE15, G)
1N6377
MPTE15
15
2.0
17.6
1.0
25
60
20.1
20.6
18
1N6379, G
(MPTE22, G)
1N6379
MPTE22
22
2.0
25.9
1.0
37.5
40
29.8
32
26
1N6380, G
(MPTE36, G)
1N6380
MPTE36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
50
1N6381, G
(MPTE45, G)
1N6381
MPTE45
45
2.0
52.9
1.0
78.9
19
63.3
70
60
ICTE5, G
ICTE10, G
ICTE12, G
ICTE5
ICTE10
ICTE12
5.0
10
12
300
2.0
2.0
6.0
11.7
14.1
1.0
1.0
1.0
9.4
16.7
21.2
160
90
70
7.1
13.7
16.1
7.5
14.1
16.5
4.0
8.0
12
ICTE15, G
ICTE18, G
ICTE22, G
ICTE36, G
3. Square waveform, PW = 8.3 ms, nonrepetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
The “G’’ suffix indicates PbFree package available.
ICTE15
ICTE18
ICTE22
ICTE36
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
1.0
1.0
1.0
1.0
25
30
37.5
65.2
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
54.3
14
18
21
26
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1N6380RL4G 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6380RL4G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 42.2V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6381 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 52.9V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6381G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 52.9V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6381RL4 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
1N6381RL4G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors
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