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參數(shù)資料
| 型號(hào)： | 1N6382/4E |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | 1N6382/4E |
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
Document Number: 88356
Revision: 04-Sep-07
www.vishay.com
117
Notes:
(1) “C” Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ± 1 V tolerance normally specified for power supply regulation on
most integrated circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter
regulated power supply voltages are employed
(4) Clamping factor: 1.33 at full rated power; 1.20 at 50 % rated power; Clamping factor: the ratio of the actual VC (Clamping Voltage) to the
VBR (Breakdown Voltage) as measured on a specific device
Note:
(1) Automotive grade AEC Q101 qualified
ELECTRICAL CHARACTERISTICS (JEDEC REGISTERED DATA) (TA = 25 °C unless otherwise noted)
JEDEC TYPE
NUMBER
GENERAL
SEMICONDUCTOR
PART NUMBER
STAND-OFF
VOLTAGE
VWM (V)
MINIMUM (3)
BREAKDOWN
VOLTAGE
AT 1.0 mA
VBR (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
MAXIMUM
CLAMPING
VOLTAGE
AT IPP = 1.0 A
VC (V)
MAXIMUM
CLAMPING
VOLTAGE AT
IPP = 10 A
VC (V)
MAXIMUM
PEAK
PULSE
CURRENT
IPP (A)
UNI-DIRECTIONAL TYPES
1N6373 (2)
ICTE-5 (2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
1N6378
ICTE-18
18.0
21.2
2.0
24.2
25.2
50
BI-DIRECTIONAL TYPES
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE-18C
18.0
21.2
2.0
24.8
25.5
50
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ICTE-5-E3/54
0.968
54
1400
13" diameter paper tape and reel
ICTE-5HE3/54 (1)
0.968
54
1400
13" diameter paper tape and reel
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| 1N6382/4F | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6382-E3/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 8.0V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6382-E3/4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 8.0V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6382-E3/51 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 8.0V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6382-E3/54 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 8.0V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1N6382-E3/73 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 8.0V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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