參數(shù)資料
型號(hào)： 1N6383/70-E3
廠商： VISHAY SEMICONDUCTORS
元件分類(lèi)： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC, CASE 1.5KE, 2 PIN
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 62K
代理商： 1N6383/70-E3
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88356
2
23-May-03
Electrical Characteristics (JEDEC Registered Data) Table 1 – Unidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum(3)
Maximum
Stand-Off
Breakdown
Reverse
Clamping
Peak
General
Voltage
Leakage
Voltage
Pulse
JEDEC
Semiconductor
at 1.0mA
at VWM
at lPP = 1.0A
at lPP = 10A
Current
Type
Part
VWM
V(BR)ID
Vc
IPP
Number
(V)
(A)
(V)
(A)
1N6373(2)
ICTE-5(2)
5.0
6.0
300
7.1
7.5
160
1N6374
ICTE-8
8.0
9.4
25.0
11.3
11.5
100
1N6375
ICTE-10
10.0
11.7
2.0
13.7
14.1
90
1N6376
ICTE-12
12.0
14.1
2.0
16.1
16.5
70
1N6377
ICTE-15
15.0
17.6
2.0
20.1
20.6
60
1N6378
ICTE-18
18.0
21.2
2.0
24.2
25.2
50
Electrical Characteristics (JEDEC Registered Data) Table 2 – Bidirectional Types
Ratings at 25°C ambient temperature unless otherwise specified.
Minimum(3)
Maximum
Stand-Off
Breakdown
Reverse
Clamping
Peak
General
Voltage
Leakage
Voltage
Pulse
JEDEC
Semiconductor
at 1.0mA
at VWM
at lPP = 1.0A
at lPP = 10A
Current
Type
Part
VWM
V(BR)ID
Vc
IPP
Number
(V)
(A)
(V)
(A)
1N6382
ICTE-8C
8.0
9.4
50.0
11.4
11.6
100
1N6383
ICTE-10C
10.0
11.7
2.0
14.1
14.5
90
1N6384
ICTE-12C
12.0
14.1
2.0
16.7
17.1
70
1N6385
ICTE-15C
15.0
17.6
2.0
20.8
21.4
60
1N6386
ICTE-18C
18.0
21.2
2.0
24.8
25.5
50
Notes:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated
circuit manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages
are employed.
(4) Clamping Factor: 1.33 at full rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V(BR) (Breakdown
Voltage) as measured on a specific device.
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1N6384/92-E3 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
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參數(shù)描述
1N6383-E3/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6383-E3/4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6383-E3/51 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6383-E3/54 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6383-E3/73 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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