參數(shù)資料
型號(hào): 1N6385-E3/54C
廠商: VISHAY SEMICONDUCTORS
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝: ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 74K
代理商: 1N6385-E3/54C
ICTE5 thru ICTE18C, 1N6373 thru 1N6386
Vishay General Semiconductor
Document Number: 88356
Revision: 07-May-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
TRANSZORB Transient Voltage Suppressors
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use C suffix (e.g. ICTE18C).
Electrical characteristics apply in both directions.
FEATURES
Glass passivated chip junction
Available
in
uni-directional
and
bi-directional
1500 W peak pulse power capability
with a 10/1000 μs waveform, repetitive
rate (duty cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Find out more about Vishay’s Automotive Grade
Product requirements at:
www.vishay.com/applications
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients
induced
by
inductive
load
switching
and lighting on ICs, MOSFET, signal lines of sensor
units
for
consumer,
computer,
industrial
and
telecommunication.
MECHANICAL DATA
Case: Molded epoxy body over passivated junction
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum
PRIMARY CHARACTERISTICS
VWM
5.0 V to 18 V
PPPM
1500 W
PD
6.5 W
IFSM
200 A
TJ max.
175 °C
Case Style 1.5KE
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)
PPPM
1500
W
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)
IPPM
See next table
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)
PD
6.5
W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Maximum instantaneous forward voltage at 100 A for uni-directional only
VF
3.5
V
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
相關(guān)PDF資料
PDF描述
1N6465US 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
1N6484 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB
1N6523U 0.25 A, SILICON, SIGNAL DIODE
1N703A 3.45 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
1N706A 5.8 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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