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參數(shù)資料
| 型號： | 1N6461 |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | TRANSIENT SUPPRESSORS |
| 中文描述： | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | GLASS, E PACKAGE, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 24K |
| 代理商： | 1N6461 |
1N6461
Thru
1N6468
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
500 Watt Axial Leaded TVS
FEATURES:
500 Watts Peak Pulse Power (tp = 10/1000μs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in
JTX
, and
JTXV
versions per
MIL-S-19500/551
DESCRIPTION
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to
MIL-S-19500/551.
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo, & cathode band
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
UNIT
Peak Pulse Power (tp = 10 x 1000μs)
Ppk
500
Watts
Operating Temperature
Tj
-65 to +175
°C
Storage Temperature
Tstg
-65 to +175
°C
Steady-State Power Dissipation @ TL = 75oC (3/8”)
PD
3
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM
(V)
5
6
12
15
24
30.5
40.3
51.6
REVERSE
LEAKAGE
CURRENT
I
R
(μA)
3000
2500
500
500
50
3
2
2
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
(V)
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
TEST
CURRENT
I
T
MAXIMUM
CLAMPING
VOLTAGE
Vc @ Ipp
PEAK PULSE
CURRENT
Ipp
Tp = 1mS
PEAK PULSE
CURRENT
Ipp
Tp = 20
μ
S
TEMPERATURE
COEFFICIENT
OF VBR
α
Vz
(mA)
25
20
5
5
2
1
1
1
(V)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
(A)
56
46
22
19
12
11
8
6
(A)
315
258
125
107
69
63
45
35
% /°C
0.040
0.040
0.050
0.060
0.084
0.093
0.094
0.096
1N6461
1N6462
1N6463
1N6464
1N6465
1N6466
1N6467
1N6468
APPLICATIONS:
Aerospace & Industrial Electronics
Board Level Protection
Airborne Systems
Shipboard Systems
Ground Systems
相關PDF資料 |
PDF描述 |
|---|---|
| 1N6462 | TRANSIENT SUPPRESSORS |
| 1N6463 | TRANSIENT SUPPRESSORS |
| 1N6464 | TRANSIENT SUPPRESSORS |
| 1N6465 | TRANSIENT SUPPRESSORS |
| 1N6466 | TRANSIENT SUPPRESSORS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N646-1 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN E - Bulk 制造商:Microsemi Corporation 功能描述:DIODE RECT STD DO-31 |
| 1N6461_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Voidless-Hermetically-Sealed Unidirectional Transient Suppressors |
| 1N6461JAN | 制造商:Microsemi Corporation 功能描述: |
| 1N6461US | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 5V 500W 2-Pin E-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 5V 500W 2PIN MELF - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 5V 500W 2-Pin E-MELF |
| 1N6461US/TR | 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 類型:齊納 單向通道:1 電壓 - 反向關態(tài)（典型值）:5V 電壓 - 擊穿（最小值）:5.6V 電壓 - 箝位（最大值）@ Ipp:9V 電流 - 峰值脈沖（10/1000μs）:56A 功率 - 峰值脈沖:500W 電源線路保護:無 應用:通用 不同頻率時的電容:- 工作溫度:-55°C ~ 175°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SQ-MELF，B 供應商器件封裝:B，SQ-MELF 標準包裝:100 |
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