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參數(shù)資料
| 型號： | 1N6474US |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | HERMETICALLY SEALED, GLASS, D-5C, MELF-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 325K |
| 代理商： | 1N6474US |
Voidless-Hermetically-Sealed Surface
Mount Unidirectional Transient
Suppressors
SCOTTSDALE DIVISION
1N6469US thru 1N6476US
W
M
.
C
1
1
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
Volts
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
BREAKDOWN
CURRENT
I
(BR)
WORKING
PEAK
VOLTAGE
V
WM
Vdc
5
6
12
15
24
30.5
40.3
51.6
MAX
LEAKAGE
CURRENT
I
D
μ
Adc
500
100
20
10
5
5
5
5
MAXIMUM
CLAMPING
VOLTAGE
V
C
@ 10/1000 μs
V(pk)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
MAXIMUM
PEAK PULSE
CURRENT
I
PP
@8/20 μs @10/1000 μs
A(pk)
945
775
374
322
207
181
135
107
MAXIMUM
TEMP.
COEF. OF
V
(BR)
%/
o
C
-.03, +0.04
0.06
0.085
0.085
.096
.098
.101
.103
mAdc
50
50
10
10
5
1
1
1
A(pk)
167
137
66
57
36.5
32
24
19
1N6469US
1N6470US
1N6471US
1N6472US
1N6473US
1N6474US
1N6475US
1N6476US
SYMBOLS & DEFINITIONS
Symbol
V
BR
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
Maximum clamping voltage at specified I
PP
(Peak Pulse Current) at the specified pulse conditions.
Peak Pulse Power: The peak power dissipation resulting from the peak impulse current I
PP
.
V
WM
I
D
V
C
P
PP
GRAPHS
P
P
)
P
Peak Value
I
PP
Pulse time duration (tp) is
defined as that point where
I
decays to 50% of peak
value (I
PP
).
time (t) in milliseconds
FIG. 2
Pulse wave form for exponential surge
for 10/1000 μs
FIG. 1 –
Non-repetive peak pulse power rating curve
NOTE: Peak power defined as peak voltage times peak current
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2004
11-01-2004 REV A
相關PDF資料 |
PDF描述 |
|---|---|
| 1N6475US | VOIDLESS HERMETICALLY SEALED SURFACE MOUNT UNDIRECTIONAL TRANSIENT SUPPRESSORS |
| 1N6475 | TRANSIENT SUPPRESSORS |
| 1N6474 | TRANSIENT SUPPRESSORS |
| 1N6492 | HERMETIC SCHOTTKY RECTIFIERS |
| 1N6506 | MONOLITHIC AIR ISOLATED DIODE ARRAY |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6475 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin Case G 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR G SD - Bulk |
| 1N6475US | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin G-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 40.3V 1.5KW 2PIN D-5C - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 40.3V 1.5KW 2-Pin G-MELF |
| 1N6475USJANTX | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 1N6476 | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 51.6V 1.5KW 2-Pin Case G 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR G SD - Bulk 制造商:Microsemi 功能描述:Diode TVS Single Uni-Dir 51.6V 1.5KW 2-Pin Case G |
| 1N6476JANTX | 制造商:Microsemi Corporation 功能描述: |
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