參數(shù)資料
型號： 1N6476
廠商： MICROSEMI CORP-COLORADO
元件分類： 參考電壓二極管
英文描述： TRANSIENT SUPPRESSORS
中文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 1/2頁
文件大小： 24K
代理商： 1N6476
1N6469
Thru
1N6476
TEL:805-498-2111 FAX:805-498-3804
1997 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
QPL
1500 Watt Axial Leaded TVS
FEATURES:
1500 Watts Peak Pulse Power (tp = 10/1000μs)
Voidless hermetically sealed glass package
Metallurgically bonded
High surge capacity
Unidirectional
Available in
JAN
,
JTX
, and
JTXV
versions per
MIL-S-19500/552
DESCRIPTION
The 1N64xx series of transient voltage suppressors are
designed to protect military and commercial electronic
equipment from overvoltages caused by lightning, ESD,
EFT, inductive load switching, and EMP. These devices are
constructed using a p-n junction TVS diode in a
hermetically sealed, voidless glass package. The
hermetically sealed package provides high reliability in
harsh environmental conditions. TVS diodes are further
characterized by their high surge capability, low operating
and clamping voltages, and a theoretically instantaneous
response time. This makes them ideal for use as board
level protection for sensitive semiconductor components.
These devices are DESC QPL qualified to
MIL-S-19500/552.
MECHANICAL CHARACTERISTICS:
Hermetically sealed glass package
Tinned copper leads
Marking : P/N, date code, logo, & cathode band
MAXIMUM RATINGS
RATING
SYMBOL
VALUE
UNIT
Peak Pulse Power (tp = 10 x 1000μs)
Ppk
1500
Watts
Operating Temperature
Tj
-65 to +175
°C
Storage Temperature
Tstg
-65 to +175
°C
Steady-State Power Dissipation @ TL = 75oC (3/8”)
PD
5
Watts
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise specified)
DEVICE
TYPE
REVERSE
STAND-OFF
VOLTAGE
VRWM
(V)
5
6
12
15
24
30.5
40.3
51.6
REVERSE
LEAKAGE
CURRENT
I
R
(μA)
5000
5000
1000
1000
100
5
5
5
MINIMUM
BREAKDOWN
VOLTAGE
VBR @ IT
(V)
5.6
6.5
13.6
16.4
27.0
33.0
43.7
54.0
TEST
CURRENT
I
T
MAXIMUM
CLAMPING
VOLTAGE
Vc @ Ipp
PEAK PULSE
CURRENT
Ipp
Tp = 1mS
PEAK PULSE
CURRENT
Ipp
Tp = 20
μ
S
TEMPERATURE
COEFFICIENT
OF VBR
α
Vz
(mA)
50
50
10
10
5
1
1
1
(V)
9.0
11.0
22.6
26.5
41.4
47.5
63.5
78.5
(A)
167
137
66
57
36.5
32
24
19
(A)
945
775
374
322
206
190
136
106
% /°C
0.040
0.040
0.050
0.060
0.084
0.093
0.094
0.096
1N6469
1N6470
1N6471
1N6472
1N6473
1N6474
1N6475
1N6476
APPLICATIONS:
Aerospace & Industrial Electronics
Board Level Protection
Airborne Systems
Shipboard Systems
Ground Systems
相關(guān)PDF資料
PDF描述
1N6486US Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N6488US Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N6490US Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N6488 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
1N6486 surface mount silicon Zener diodes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6476JANTX 制造商:Microsemi Corporation 功能描述:
1N6476US 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 51.6V 1.5KW 2-Pin G-MELF 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 51.6V 1.5KW 2PIN D-5C - Bulk
1N6478 制造商:GS 功能描述:General Purpose 50V SMD (Surface Mount) Rectifier DO-213AB 1.0A 制造商:GS 功能描述:General Purpose 50V SMD (Surface Mount) Rectifier DO-213AB 1.0A - free partial T/R at 500.
1N6478/25 功能描述:整流器 1.0 Amp 50 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
1N6478/26 功能描述:整流器 1.0 Amp 50 Volt RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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