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參數(shù)資料
| 型號(hào)： | 1N6622 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | RECOVERY GLASS RECTIFIERS |
| 中文描述： | 1.2 A, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS, A, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 335K |
| 代理商： | 1N6622 |
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
W
M
.
C
SCOTTSDALE
DIVISION
1N6620US thru 1N6625US
1
ELECT RICAL CHARACT ERIS T ICS @ 25
o
C
MINIMUM
BREAK-
DOWN
VOLTAGE
V
R
I
R
= 50
μ
A
MAXIMUM
REVERSE
CURRENT I
R
@
V
RWM
I
R
T
A
=25
o
C T
A
=150
o
C
TYPE
NUMBER
MAXIMUM
FORWARD
VOLTAGE
V
F
@ I
F
WORKING
PEAK
REVERSE
VOLTAGE
V
RWM
MAXIMUM
REVERSE
RECOVERY
TIME (LOW
CURRENT)
t
rr
Note 1
ns
30
30
30
50
50
60
MAXIMUM
REVERSE
RECOVERY
TIME (HIGH
CURRENT)
t
rr
Note 2
ns
45
45
45
60
60
80
PEAK
RECOVERY
CURRENT
I
RM
(rec)
I
F
= 2A,
100A/
μ
s
Note 2
A
3.5
3.5
3.5
4.2
4.2
5.0
FORWARD
RECOVERY
VOLTAGE
V
FRM
Max
I
F
= 0.5A
t
fr
=12ns
V
V @ A
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.40V @ 1.2A 1.60V @ 2.0A
1.55V @ 1.0A 1.80V @ 1.5A
1.55V @ 1.0A 1.80V @ 1.5A
1.75V @ 1.0A 1.95V @ 1.5A
V @ A
V
μ
A
0.5
0.5
0.5
0.5
0.5
1.0
μ
A
150
150
150
150
150
200
V
12
12
12
18
18
30
1N6620
1N6621
1N6622
1N6623
1N6624
1N6625
NOTE 1: Low Current Reverse Recovery Time Test Conditions: I
F
=0.5A, I
RM
=1.0A, I
R(REC)
= 0.25A per MIL-STD-750,
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: I
F
= 2 A, di/dt=100 A/
μ
s
MIL-STD-750, Method 4031,
Condition D.
S Y MBOLS & DEFINIT IONS
Symbol
V
BR
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
V
F
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
picofarads.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
CHART S AND GRAPHS
220
440
660
880
990
1100
200
400
600
800
900
1000
Definition
V
RWM
I
R
C
t
rr
FIGURE 1
FIGURE 2
Typical Forward Current
vs
Forward Voltage
Typical Forward Current
vs
Forward Voltage
Microsemi
Scottsdale Division
Page 2
Copyright
2005
6-19-2005 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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