參數(shù)資料
型號: 1N6626D3B-JQRS.GCDE
廠商: SEMELAB LTD
元件分類: 參考電壓二極管
英文描述: 1.75 A, 200 V, SILICON, RECTIFIER DIODE
封裝: CERAMIC, DLCC3 VARIANT B, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 276K
代理商: 1N6626D3B-JQRS.GCDE
ULTRA FAST RECOVERY
POWER RECTIFIER
1N6626D3A / 1N6626D3B
Semelab
Semelab ltd
ltd
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8975
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 2
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbol
Parameters
Test Conditions
Min.
Typ.
Max.
Unit
IF = 4A
1.5
Diode Forward Voltage
IF = 2A
1.35
VF
3
TA = -65°C
1.65
V
VR = 200V
TA = 25°C
2.0
IR
3
Reverse Current Leakage
TA = 150°C
500
A
IR = 50A
220
VBR
3
Breakdown Voltage
TA = -65°C
200
V
DYNAMIC CHARACTERISTICS
CT
Capacitance
VR = 10V
f = 1.0MHz
40
pF
trr1
4
Low Current Reverse Recovery
Time
IF = 0.5A, IRM = 1.0A, IR(REC) = 0.25A
30
ns
VFRM
Forward Recovery Voltage
IF = 1A
tr = 12ns
8
V
Notes
3 Pulse Width ≤ 300us, δ ≤ 2%
4 As per MIL-STD-750 Method 4031 Condition B.
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