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參數(shù)資料
| 型號： | 1N823 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | TRANSF 5VAC 1.2A SPLIT PACK |
| 中文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 317K |
| 代理商： | 1N823 |
6.2 & 6.55 Volt Temperature Compensated
Zener Reference Diodes
SCOTTSD A L E DIVISION
1N821 thru 1N829A-1 DO-7
W
.Mi
cr
os
em
i
.C
O
M
1N
82
1—
1N
82
9A
-1
*ELECTRICAL CHARACTERISTICS @ 25oC, unless otherwise specified
ZENER
VOLTAGE
(Note 1 and 4)
VZ @ IZT
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
(Note 2)
ZZT @ IZT
MAXIMUM
REVERSE
CURRENT
IR @ 3 V
VOLTAGE
TEMPERATURE
STABILITY
(
VZT MAX)
-55
oC to +100oC
(Note 3 and 4)
EFFECTIVE
TEMPERATURE
COEFFICIENT
αVZ
JEDEC
TYPE NUMBER
(Note 1, 5 & 6)
VOLTS
mA
OHMS
A
mV
%/
oC
1N821
1N821A
1N822
1N823
5.9 – 6.5
7.5
15
10
15
2.0
96
48
0.01
0.005
1N823A
1N824
1N825
1N825A
5.9 – 6.5
7.5
10
15
10
2.0
48
19
0.005
0.002
1N826
1N827
1N827A
1N828
6.2 – 6.9
5.9 – 6.5
6.2 – 6.9
7.5
15
10
15
2.0
20
9
10
0.002
0.001
1N829
1N829A
5.9 – 6.5
7.5
15
10
2.0
5
0.0005
*JEDEC Registered Data.
Double Anode; electrical specifications apply under both bias polarities.
NOTES:
1.
Add a “-1” suffix for internal metallurgical bond. When ordering devices with tighter tolerances than specified for the VZ voltage nominal of
6.35 V, add a hyphened suffix to the part number for desired tolerance, e.g. 1N827-1-2%, 1N829-1-1%, 1N829A-1%, 1N829A-1-1%, etc.
2.
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5 mA dc @ 25
oC.
3.
The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV
change at discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
5.
1N821, 1N823, 1N825, 1N827, and 1N829 also have qualification to MIL-PRF-19500/159 by adding the JAN,
JANTX, JANTXV, or
JANS prefix to part numbers as well as the “-1” suffix; e.g. JANTX1N827-1, JANTXV1N829-1, etc.
6.
Designate Radiation Hardened devices with “RH” prefix instead of “1N”, e.g. RH829A instead of 1N829A.
GRAPHS
Change
in
tempe
rature
coefficient
(%/
o C)
Change
in
tempe
rature
coefficient
(mV/
o C)
FIGURE 1
TYPICAL CHANGE OF TEMPERATURE COEFFICIENT
The curve shown in Figure 1 is typical of the diode series and
greatly simplifies the estimation of the Temperature Coefficient
(TC) when the diode is operated at currents other than 7.5mA.
EXAMPLE: A diode in this series is operated at a current of
7.5mA and has specified Temperature Coefficient (TC) limits of
+/-0.005%/
oC. To obtain the typical Temperature Coefficient
limits for this same diode operated at a current of 6.0mA, the
new TC limits (%/
oC) can be estimated using the graph in
FIGURE 1.
At a test current of 6.0mA the change in Temperature Coefficient
(TC) is approximately –0.0006%.
oC. The algebraic sum of +/-
0.005%
oC and –0.0006%/oC gives the estimated limits of
+0.0044%/
oC and -0.0056%/oC.
WITH CHANGE IN OPERATING CURRENT.
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright
2003
10-27-2003 REV C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N823(DO35) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:0TC Reference Voltage Zener |
| 1N823-1 | 制造商:Microsemi Corporation 功能描述:DIODE ZENER 6.2V 500MW DO-35 |
| 1N823-1(DO35) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:0TC Reference Voltage Zener |
| 1N823-1-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
| 1N823-1-2 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated |
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