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參數(shù)資料
| 型號： | 1N914 |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Switching Diode - Silicon epitaxial planar type |
| 中文描述： | 開關(guān)二極管-硅外延平面型 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 1N914 |
1999 May 26
3
Philips Semiconductors
Product specication
High-speed diode
1N914
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed circuit-board without metallization pad.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.3
1
V
IR
reverse current
see Fig.5
VR =20V
25
nA
VR =75V
5
A
VR =20V; Tj = 150 °C50
A
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
8ns
when switched from IF = 10 mA to
IR = 60 mA; RL = 100 ; measured at
IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 50 mA; tr = 20 ns;
see Fig.8
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth j-a
thermal resistance from junction to ambient
lead length 10 mm; note 1
500
K/W
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