參數(shù)資料
型號: 1N914
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: High-speed diode
中文描述: 0.075 A, 100 V, SILICON, SIGNAL DIODE, DO-35
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù): 4/8頁
文件大?。?/td> 51K
代理商: 1N914
1999 May 26
4
Philips Semiconductors
Product specication
High-speed diode
1N914
GRAPHICAL DATA
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
100
0
50
MGD289
100
IF
(mA)
T
( C)
amb
o
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.3
Forward current as a function of forward
voltage.
(1) Tj = 175 °C; typical values.
(2) Tj =25 °C; typical values.
(3) Tj =25 °C; maximum values.
handbook, halfpage
012
600
0
200
400
MBG464
VF (V)
IF
(mA)
(1)
(2)
(3)
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
Tj =25 °C prior to surge.
handbook, full pagewidth
MBG704
10
tp (s)
1
IFSM
(A)
102
101
104
102
103
10
1
相關(guān)PDF資料
PDF描述
1N914 SWITCHING DIODE
1N914 SILICON EPITAXIAL PLANAR DIODES
1N914 HIGH SPEED SILICON SWITCHING DIODE
1N914B HIGH SPEED SILICON SWITCHING DIODE
1N914UR SWITCHING DIODE
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