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參數(shù)資料
| 型號： | 1N974DTA |
| 廠商： | MOTOROLA INC |
| 元件分類： | 齊納二極管 |
| 英文描述： | 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AH |
| 文件頁數(shù)： | 9/18頁 |
| 文件大?。?/td> | 185K |
| 代理商： | 1N974DTA |
GENERAL DATA — 500 mW DO-35 GLASS
Motorola TVS/Zener Device Data
6-113
500 mW DO-35 Glass Data Sheet
Low Voltage Avalanche Passivated
Silicon Oxide Zener Regulator Diodes
Same as 1N5520B through 1N5530B except low noise test
spec omitted.
Low Maximum Regulation Factor
Low Zener Impedance
Low Leakage Current
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified. Based on dc measurements at thermal equilibrium;
ELECTRICAL CHARACTERISTICS VF = 1.1 Max @ IF = 200 mA for all types.)
Ml
Nominal
Zener
T
Max Zener
Max Reverse Leakage Current
Maximum
DC Zener
Regulation
Low
Motorola
Type No.
(Note 1)
Zener
Voltage
VZ @ IZT
Volts
(Note 2)
Test
Current
IZT
mAdc
Max Zener
Impedance
ZZT @ IZT
Ohms
(Note 3)
IR
Adc
(Note 4)
VR – Volts
DC Zener
Current
IZM
mAdc
(Note 5)
Regulation
Factor
VZ
Volts
(Note 6)
Low
VZ
Current
IZL
mAdc
MZ5520B
3.9
20
22
1
98
0.85
2.0
MZ5521B
4.3
20
18
3
1.5
88
0.75
2.0
MZ5522B
4.7
10
22
2
81
0.6
1.0
MZ5523B
5.1
5
26
2
2.5
75
0.65
0.25
MZ5524B
5.6
3
30
2
3.5
68
0.3
0.25
MZ5525B
6.2
1
30
1
5
61
0.2
0.01
MZ5526B
6.8
1
30
1
6.2
56
0.1
0.01
MZ5527B
7.5
1
35
0.5
6.8
51
0.05
0.01
MZ5528B
8.2
1
40
0.5
7.5
46
0.05
0.01
MZ5529B
9.1
1
45
0.1
8.2
42
0.05
0.01
MZ5530B
10
1
60
0.05
9.1
38
0.1
0.01
NOTE 1. TOLERANCE AND VOLTAGE DESIGNATION
The “B” suffix type numbers listed are
±5% tolerance of nominal VZ.
NOTE 2. ZENER VOLTAGE (VZ) MEASUREMENT
Nominal zener voltage is measured with the device junction in thermal equilibrium with ambi-
ent temperature of 25
°C.
NOTE 3. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from the 60 Hz ac voltage, which results when an ac current
having an rms value equal to 10% of the dc zener current (IZT) is superimposed on IZT.
NOTE 4. REVERSE LEAKAGE CURRENT IR
Reverse leakage currents are guaranteed and are measured at VR as shown on the table.
NOTE 5. MAXIMUM REGULATOR CURRENT (IZM)
The maximum current shown is based on the maximum voltage of a
±5% type unit, therefore,
it applies only to the “B” suffix device. The actual IZM for any device may not exceed the value
of 400 milliwatts divided by the actual VZ of the device.
NOTE 6. MAXIMUM REGULATION FACTOR (
VZ)
VZ is the maximum difference between VZ at IZT and VZ at IZL measured with the device
junction in thermal equilibrium.
NOTE 7. SPECIAL SELECTORS AVAILABLE INCLUDE:
A) Tighter voltage tolerances. Contact your nearest Motorola representative for more infor-
mation.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N975 | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:SILICON PLANAR ZENER DIODES |
| 1N975A | 制造商:Microsemi Corporation 功能描述:ZENER SGL 39V 10% 500MW 2PIN DO-35 - Bulk 制造商:Microsemi Corporation 功能描述:DIODE ZENER 39V 500MW DO-7 |
| 1N975B | 功能描述:穩(wěn)壓二極管 Zener Diode RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N975B BK | 功能描述:DIODE ZENER 39V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:39V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 時的電流 - 反向漏電流:5μA @ 29.7V 不同 If 時的電壓 - 正向（Vf:1.5V @ 200mA 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500 |
| 1N975B TR | 功能描述:DIODE ZENER 39V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:帶卷（TR） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:39V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:80 Ohms 不同?Vr 時的電流 - 反向漏電流:5μA @ 29.7V 不同 If 時的電壓 - 正向（Vf:1.5V @ 200mA 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:10,000 |
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