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參數(shù)資料
| 型號(hào)： | 1PMT5925BT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | PT 1.5/ 8-PVH-3.5 |
| 中文描述： | 10 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 1PMT5925BT1 |
1PMT5920B Series
http://onsemi.com
6
INFORMATION FOR USING THE POWERMITE SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
POWERMITE
0.100
2.54
0.025
0.635
0.050
1.27
0.105
2.67
0.030
0.762
inches
mm
POWERMITE POWER DISSIPATION
The power dissipation of the Powermite is a function of
the drain pad size. This can vary from the minimum pad
size for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
J(max)
, the maximum rated junction
temperature of the die, R
JA
, the thermal resistance from
the device junction to ambient, and the operating
temperature, T
A
. Using the values provided on the data
sheet for the Powermite package, P
D
can be calculated as
follows:
T
J(max)
T
A
P
D
=
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25
°
C,
one can calculate the power dissipation of the device which
in this case is 504 milliwatts.
P
D
=150
°
C 25
°
C
248
°
C/W
The 248
°
C/W for the Powermite package assumes the
use of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 504
milliwatts. There are other alternatives to achieving higher
power dissipation from the Powermite package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad
. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
= 504 milliwatts
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°
C.
The soldering temperature and time shall not exceed
260
°
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* * Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 1PMT5925BT1G | 功能描述:DIODE ZENER 10V 3.2W POWERMITE RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/齊納 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 電壓 - 齊納（標(biāo)稱）(Vz):36V 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:900mV @ 10mA 電流 - 在 Vr 時(shí)反向漏電:100nA @ 27V 容差:±5% 功率 - 最大:200mW 阻抗（最大）(Zzt):70 歐姆 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:SOT-323 包裝:剪切帶 (CT) 工作溫度:-65°C ~ 150°C 產(chǎn)品目錄頁(yè)面:1585 (CN2011-ZH PDF) 其它名稱:MMBZ5258BWMMBZ5258BWCTMMBZ5258BWCT-NDMMBZ5258BWDICT |
| 1PMT5925BT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.2 Watt Plastic Surface Mount POWERMITE Package |
| 1PMT5925BT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:3.2 Watt Plastic Surface Mount POWERMITE Package |
| 1PMT5925C/TR13 | 功能描述:DIODE ZENER 10V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:10V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:4.5 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 8V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應(yīng)商器件封裝:DO-216AA 標(biāo)準(zhǔn)包裝:12,000 |
| 1PMT5925C/TR7 | 功能描述:DIODE ZENER 10V 3W DO216AA 制造商:microsemi corporation 系列:- 包裝:帶卷（TR） 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:10V 容差:±2% 功率 - 最大值:3W 阻抗（最大值）（Zzt）:4.5 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 8V 不同 If 時(shí)的電壓 - 正向（Vf）:1.2V @ 200mA 工作溫度:-55°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:DO-216AA 供應(yīng)商器件封裝:DO-216AA 標(biāo)準(zhǔn)包裝:3,000 |
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