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參數(shù)資料
| 型號(hào)： | 1SMA58CAT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 400 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 400 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 403D-02, SMA, 2 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | 1SMA58CAT3 |
1SMA10CAT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
400
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from JunctiontoLead
P
D
R
JL
1.5
20
50
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from JunctiontoAmbient
P
D
R
JA
0.5
4.0
250
W
mW/
°
C
°
C/W
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. 10 X 1000 s, nonrepetitive
2. 1
″
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
*Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
BiDirectional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1SMA58CAT3G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 58V 400W Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1SMA5913A | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| 1SMA5913A_07 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| 1SMA5913B | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT SILICON ZENER DIODES |
| 1SMA5913BT3 | 功能描述:穩(wěn)壓二極管 3.3V 1.5W RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
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