參數(shù)資料
型號(hào)： 1SMB11AT3
廠商： ON SEMICONDUCTOR
元件分類： 參考電壓二極管
英文描述： Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，11V變位電壓，齊納瞬變電壓抑制器)
中文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封裝： PLASTIC, CASE 403A-03, SMB, 2 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 69K
代理商： 1SMB11AT3
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMB5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance from JunctiontoLead
P
D
R
JL
3.0
40
25
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from JunctiontoAmbient
P
D
R
JA
0.55
4.4
226
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4) @ T
A
= 25
°
C
I
FSM
100
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 s, nonrepetitive.
2. 1 in square copper pad, FR4 board.
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
nonrepetitive duty cycle.
相關(guān)PDF資料
PDF描述
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1SMB16AT3 Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，16V變位電壓，齊納瞬變電壓抑制器)
1SMB17AT3 Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，17V變位電壓，齊納瞬變電壓抑制器)
1SMB18AT3 Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，18V變位電壓，齊納瞬變電壓抑制器)
1SMB51AT3 Plastic Surface Mount Zener Overvoltage Transienc Suppressor(峰值功率175W，塑料表貼封裝，51V變位電壓，齊納瞬變電壓抑制器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1SMB11AT3G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 11V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMB11CA 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:BI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 600 WATTS, 5.0 THRU 170 VOLTS
1SMB11CAT3 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 11V 600W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMB11CAT3G 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 11V 600W Bidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1SMB12 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:Zener Overvoltage Transient Suppressors
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