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參數(shù)資料
| 型號(hào)： | 1SMC17AT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 403-03, SMC, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 69K |
| 代理商： | 1SMC17AT3 |
Uni–Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMC5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
1500
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2.)
Derate Above 75
°
C
Thermal Resistance from Junction to Lead
P
D
R
JL
4.0
54.6
18.3
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3.) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from Junction to Ambient
P
D
R
JA
0.75
6.1
165
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4.) @ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
–65 to +150
°
C
1. 10 X 1000 s, non–repetitive
2. 1
″
square copper pad, FR–4 board
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max @ I
F
= 100 A) (Note 5.)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms
non–repetitive duty cycle
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