參數(shù)資料
型號(hào): 1SV257
廠(chǎng)商: Toshiba Corporation
英文描述: Variable Capacitance Diode Silicon Epitaxial Planar Type(變?nèi)莨柰庋悠矫嫘投O管(用于UHF波段無(wú)線(xiàn)電臺(tái)))
中文描述: 變?nèi)荻O管外延硅平面型(變?nèi)莨柰庋悠矫嫘投O管(用于超高頻波段無(wú)線(xiàn)電臺(tái)))
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 269K
代理商: 1SV257
TOSHIBA
TOSHIBA CORPORATION
1/2
Discrete Semiconductors
1SV257
Variable Capacitance Diode
Silicon Epitaxial Planar Type
VCO For UHF Ratio
Features
Ultra Low Series Resistance : r
Useful for Small Size Set
s
= 0.2
(Typ.)
Absolute Maximum Ratings (Ta = 25
°
C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
125
°
C
Storage Temperature Range
T
stg
-55 ~ 125
°
C
Electrical Characteristics (Ta = 25
°
C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
= 1
μ
A
15
V
Reverse Current
I
R
V
R
= 15V
3
nA
Capacitance
C2V
V
R
= 2V, f = 1MHz
14
15
16
pF
Capacitance
C10V
V
R
= 10V, f = 1MHz
5.5
6
6.5
pF
Capacitance Ratio
C2V/C10V
2.0
2.5
Series Resistance
r
s
V
R
= 5V, f = 470MHz
0.2
0.4
Marking
Unit in mm
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