參數(shù)資料
型號(hào): 1SV314
元件分類: 參考電壓二極管
英文描述: UHF BAND, 7.85 pF, SILICON, VARIABLE CAPACITANCE DIODE
封裝: 1-1G1A, ESC, 2 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 131K
代理商: 1SV314
1SV314
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV314
VCO for UHF Band Radio
High Capacitance Ratio
: C0.5 V / C2.5 V = 2.5 (Typ.)
Low Series Resistance
: rs = 0.35 (Typ.)
Useful for Small Size Tuner
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
VR
10
V
Junction Temperature
Tj
125
°C
Storage Temperature Range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
TYP.
MAX
UNIT
Reverse Voltage
VR
IR = 1μA
10
V
Reverse Current
IR
VR = 10 V
3
nA
Capacitance
C0.5 V
VR = 0.5 V, f = 1 MHz
7.3
8.4
pF
Capacitance
C2.5 V
VR = 2.5 V, f = 1 MHz
2.75
3.4
pF
Capacitance Ratio
C0.5 V /
C2.5 V
2.4
2.5
Series Resistance
rs
VR = 1 V, f = 470 MHz
0.35
0.45
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
11G1A
Weight:0.0014g (typ.)
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