參數(shù)資料
型號(hào): 1SV329
廠商: Toshiba Corporation
英文描述: TOSHIBA Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio
中文描述: 東芝半導(dǎo)體硅外延平面型超高頻波段的VCO電臺(tái)
文件頁(yè)數(shù): 1/4頁(yè)
文件大小: 96K
代理商: 1SV329
1SV329
2003-03-24
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV329
VCO for UHF Band Radio
High capacitance ratio: C
1 V
/C
4 V
= 2.8 (typ.)
Low series resistance: r
s
= 0.55
(typ.)
Useful for small size tuner.
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
V
R
10
V
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
55~125
°C
Electrical Characteristics
(Ta 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
V
R
I
R
1 A
10
V
Reverse current
I
R
V
R
10 V
3
nA
Capacitance
C
1 V
V
R
1 V, f 1 MHz
5.7
6.7
pF
Capacitance
C
4 V
V
R
4 V, f 1 MHz
1.85
2.45
pF
Capacitance ratio
C
1 V
/C
4 V
2.7
2.8
Series resistance
r
s
V
R
1 V, f 470 MHz
0.55
0.7
Note: Signal level when capacitance is measured: Vsig 100 mVrms
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
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